机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 会议论文 [1]

发表日期

• 2015 [1]
• 2010 [2]
• 2005 [1]
• 2003 [2]
• 2002 [1]
• 2001 [1]
• 更多

学科主题

• 半导体材料 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Shifting the light emitting component from core to shell: an effective approach to improve the efficiency of light-emitting diodes based on multi-junction quantum materials 期刊论文  OAI收割 nanoscale, 2015, 卷号: 7, 页码: 17283 Yanpei Li; Kong Liu; Shudi Lu; Shizhong Yue; Dan Chi; Zhijie Wang; Shengchun Qu; Zhanguo Wang 收藏  |  浏览/下载：13/0  |  提交时间：2016/03/23 Magnetoresistance in a nominally undoped InGaN thin film 期刊论文  OAI收割 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 63-66 作者:  Ding K 收藏  |  浏览/下载：122/34  |  提交时间：2010/04/28 NEGATIVE MAGNETORESISTANCE  DIODES   In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516 Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.) 收藏  |  浏览/下载：293/18  |  提交时间：2010/08/17 MOLECULAR-BEAM EPITAXY  STRAIN RELAXATION  GROWTH TEMPERATURE  INTERFACE  ALLOYS  GAAS  HETEROSTRUCTURES  MICROSTRUCTURE  GANXAS1-X  NITROGEN   Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 25, 期号: 4, 页码: 592-596 作者:  Jin P;  Xu B 收藏  |  浏览/下载：59/0  |  提交时间：2010/03/17 stress   Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 27-32 Xu YY; Liao XB; Kong GL; Zeng XB; Hu ZH; Diao HW; Zhang SB 收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12 nanostructures  growth from vapor  chemical vapor deposition processes  semiconducting silicon  A-SI-H  MICROCRYSTALLINE SILICON  EXCITATION-FREQUENCY  HYDROGENATED SILICON  DEPOSITION  PLASMA  TEMPERATURE   Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423 Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL 收藏  |  浏览/下载：23/0  |  提交时间：2010/08/12 amorphous layer  dislocation  transmission electron microscopy  metalorganic chemical vapor deposition  GaN  MOLECULAR-BEAM EPITAXY  HIGH-QUALITY GAN  HETEROEPITAXIAL GROWTH  ELECTRON-DIFFRACTION  DEFECT STRUCTURE  HETEROSTRUCTURE  DISLOCATIONS  MICROSCOPY  (111)SI  LAYER   Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128 Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW 收藏  |  浏览/下载：124/0  |  提交时间：2010/08/12 nucleation layers  X-ray diffraction  metalorganic chemical vapor deposition  gallium compounds  nitrides  LIGHT-EMITTING-DIODES  CHEMICAL-VAPOR-DEPOSITION  AIN BUFFER LAYER  GROWN GAN  SAPPHIRE SUBSTRATE  QUALITY  FILMS  BLUE  TEMPERATURE  EVOLUTION   Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文  OAI收割 6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001 Lu LW; Ge WK; Sou IK; Wang J 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 ZNSTE   Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors 期刊论文  OAI收割 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 147-152 Wu J; Lin F 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 In0.8Ga0.2As/InAlAs/InP  misfit dislocations  surface morphology  GROWTH  RELAXATION  SUBSTRATE  CIRCUITS   RESEARCH ON ELECTRICAL-PROPERTIES OF AMPHIPHILIC LIPID-MEMBRANES BY MEANS OF INTERDIGITAL ELECTRODES 期刊论文  OAI收割 materials science & engineering c-biomimetic materials sensors and systems, 1995, 卷号: 2, 期号: 3, 页码: 159-163 SUN AN; XU HY; CHEN ZK; CUI L; HAI XL 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/17 AMPHIPHILIC LIPID MEMBRANES  INTERDIGITAL ELECTRODES  ELECTRICAL PROPERTIES