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  • 半导体材料 [18]
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Vapor Phase Growth and Imaging Stacking Order of Bilayer Molybdenum Disulfide 期刊论文  OAI收割
journal of physical chemistry c, 2014, 卷号: 118, 期号: 17, 页码: 9203-9208
Yang, SX; Kang, J; Yue, Q; Yao, K
收藏  |  浏览/下载：20/0  |  提交时间：2015/08/21
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文  OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145
作者:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ
  |  收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals 期刊论文  OAI收割
nanotechnology, 2010, 卷号: 21, 期号: 28, 页码: art. no. 285602
Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Li K (Li Kai); Hou YB (Hou Yanbing); Teng F (Teng Feng); Cao J (Cao Jie); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：217/43  |  提交时间：2010/07/18
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文  OAI收割
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文  OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：73/0  |  提交时间：2010/04/11
Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film 期刊论文  OAI收割
nanotechnology, 2006, 卷号: 17, 期号: 13, 页码: 3274-3279
Feng W; Li Y; Feng YY; Wu J
收藏  |  浏览/下载：80/0  |  提交时间：2010/04/11
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of crystal growth, 2004, 卷号: 266, 期号: 4, 页码: 423-428
作者:  Li DB;  Han XX;  Han PD
收藏  |  浏览/下载：161/51  |  提交时间：2010/03/09
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates 期刊论文  OAI收割
journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72
Shen XM; Fu Y; Feng G; Zhang BS; Feng ZH; Wang YT; Yang H
收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 期刊论文  OAI收割
physica status solidi a-applied research, 2001, 卷号: 188, 期号: 2, 页码: 653-657
Sun XL; Yang H; Zhu JJ; Wang YT; Chen Y; Li GH; Wang ZG
收藏  |  浏览/下载：101/3  |  提交时间：2010/08/12
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文  OAI收割
4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001
Sun XL; Yang H; Zhu JJ; Wang YT; Chen Y; Li GH; Wang ZG
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15