机构

• 半导体研究所 [21]

采集方式

• OAI收割 [21]

内容类型

• 期刊论文 [19]
• 会议论文 [2]

发表日期

• 2017 [1]
• 2011 [1]
• 2010 [1]
• 2008 [1]
• 2006 [3]
• 2003 [3]
• 更多

学科主题

• 半导体物理 [21]

筛选

浏览/检索结果: 共21条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Atomic Mechanism of Interfacial-Controlled Quantum Efficiency and Charge Migration in InAs/GaSb Superlattice 期刊论文  OAI收割 ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 26642−26647 作者:  Han Bi;  Xi Han;  Lu Liu;  Yunhao Zhao;  Xuebing Zhao 收藏  |  浏览/下载：30/0  |  提交时间：2018/06/15 Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文  OAI收割 nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359 作者:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH   |  收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05 CdSe  nanowires  photoluminescence  CHEMICAL-VAPOR-DEPOSITION  SHAPE-SELECTIVE SYNTHESIS  LIQUID-SOLID MECHANISM  OPTICAL-PROPERTIES  SILICON NANOWIRES  SI NANOWIRES  ZNSE NANOWIRES  SEMICONDUCTOR NANOCRYSTALS  STRUCTURAL-PROPERTIES  EPITAXIAL-GROWTH  Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：105/1  |  提交时间：2010/10/11 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  GAN NANOWIRES  NATIVE DEFECTS  COMPLEXES  EPITAXY  GROWTH  ARRAYS   Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP 收藏  |  浏览/下载：51/4  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  NANORODS  MECHANISM  NANOWIRES   Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582 Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  ORIGIN   Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：81/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文  OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145 Gong Z; Niu ZC; Fang ZD 收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  QUANTUM-DOT SUPERLATTICES  VICINAL GAAS(001)  GAAS  WIRES  POLARIZATION  GROWTH  WELLS  TEMPERATURE  MECHANISM   A study of the growth and optical properties of AlInGaN alloys 期刊论文  OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 10, 页码: 2632-2637 Huang JS; Dong X; Lu XL; Xu ZY; Ge WK 收藏  |  浏览/下载：265/14  |  提交时间：2010/08/12 AlInGaN  MOCVD  localized exitons  quantum dots  TIME-RESOLVED PHOTOLUMINESCENCE  MULTIPLE-QUANTUM WELLS  LUMINESCENCE  RELAXATION  SILICON  GAN   Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS 期刊论文  OAI收割 journal of applied physics, 2003, 卷号: 93, 期号: 9, 页码: 5325-5330 Lu LW; Yang CL; Wang J; Sou IK; Ge WK 收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  TRANSIENT SPECTROSCOPY  TEMPERATURE-DEPENDENCE  PHOTOLUMINESCENCE  WELL  EPILAYERS  SURFACE   Silicon doping induced increment of quantum dot density 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 10, 页码: 6314-6318 作者:  Duan RF 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 MBE  silicon  doping  density  InGaAs/GaAs  SAOD  INGAAS  ISLANDS  GAAS