中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 光电子学 [161]
筛选

浏览/检索结果: 共161条,第1-10条 帮助

限定条件    
条数/页: 排序方式:
Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition 期刊论文  OAI收割
superlattices and microstructures, 2016, 卷号: 91, 页码: 259-268
Fan Yang; Yuan-tao Zhang; Xu Han; Peng-chong Li; Jun-yan Jiang; Zhen Huang; Jing-zhi Yin; De-gang Zhao; Bao-lin Zhang; Guo-tong Du
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/10
Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文  OAI收割
Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703
Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du
收藏  |  浏览/下载:30/0  |  提交时间:2017/03/10
Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition 期刊论文  OAI收割
vacuum, 2015, 卷号: 119, 期号: 2015, 页码: 63e67
Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du
收藏  |  浏览/下载:13/0  |  提交时间:2016/03/23
Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of vacuum science & technology b, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 2014, 卷号: 32, 32, 期号: 5, 页码: 051207, 051207
作者:  
He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
  |  收藏  |  浏览/下载:28/0  |  提交时间:2015/03/25
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割
thin solid films, THIN SOLID FILMS, 2014, 2014, 卷号: 564, 564, 页码: 135-139, 135-139
作者:  
He, XG;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P
  |  收藏  |  浏览/下载:31/0  |  提交时间:2015/03/25
Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition 期刊论文  OAI收割
acta physica sinica, 2013, 卷号: 62, 期号: 8, 页码: 086102
Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng
收藏  |  浏览/下载:17/0  |  提交时间:2014/05/16
GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition 期刊论文  OAI收割
applied physics letters, Applied Physics Letters, 2013, 2013, 卷号: 103, 103, 期号: 22, 页码: 222105, 222105
作者:  
Xu, Kun;  Xu, Chen;  Xie, Yiyang;  Deng, Jun;  Zhu, Yanxu
  |  收藏  |  浏览/下载:33/0  |  提交时间:2014/04/04
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
收藏  |  浏览/下载:12/0  |  提交时间:2013/03/27
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文  OAI收割
journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H
收藏  |  浏览/下载:17/0  |  提交时间:2013/02/27
Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文  OAI收割
applied physics express, 2012, 卷号: 5, 期号: 10, 页码: 101002
Wang JM (Wang, Jiaming); Xu FJ (Xu, Fujun); Huang CC (Huang, Chengcheng); Xu ZY (Xu, Zhengyu); Zhang X (Zhang, Xia); Wang Y (Wang, Yan); Ge WK (Ge, Weikun); Wang XQ (Wang, Xinqiang); Yang ZJ (Yang, Zhijian); Shen B (Shen, Bo); Li W (Li, Wei); Wang WY (Wang, Weiying); Jin P (Jin, Peng)
收藏  |  浏览/下载:18/0  |  提交时间:2013/03/27