中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
近代物理研究所 [19]
新疆理化技术研究所 [17]
国家空间科学中心 [6]
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OAI收割 [49]
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期刊论文 [37]
会议论文 [8]
学位论文 [3]
外文期刊 [1]
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2020 [1]
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Physics [4]
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Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies
期刊论文
OAI收割
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:
He, Ze
;
Zhao, Shi-Wei
;
Liu, Tian-Qi
;
Cai, Chang
;
Yan, Xiao-Yu
  |  
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2022/01/12
Double interlocked storage cell (DICE)
Error detection and correction (EDAC) code
Heavy ion
Radiation hardening technology
Single event upset (SEU)
Static random-access memory (SRAM)
Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system
期刊论文
OAI收割
MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 7
作者:
Yu, Jian
;
Cai, Chang
;
Ning, Bingxu
;
Gao, Shuai
;
Liu, Tianqi
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2022/01/24
Heavy ions
Irradiation
Hardened
Single event upset
Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories
期刊论文
OAI收割
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669
作者:
Wu, Bi
;
Wang, Chao
;
Wang, Zhaohao
;
Wang, Ying
;
Zhang, Deming
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2021/12/01
Random access memory
Magnetic tunneling
Switches
Reliability
Tunneling magnetoresistance
Metals
Transistors
SOT-MRAM
low power
high speed
high reliability
SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA
期刊论文
OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12
作者:
Cai, Chang
;
Gao, Shuai
;
Zhao, Peixiong
;
Yu, Jian
;
Zhao, Kai
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/01/19
field-programmable gate arrays
embedded block memory
single event
fault tolerance
radiation effect
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
  |  
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs
期刊论文
OAI收割
ELECTRONICS, 2019, 卷号: 8, 期号: 3, 页码: 13
作者:
Ke, Lingyun
;
Zhao, Peixiong
;
Liu, Jie
;
Fan, Xue
;
Cai, Chang
  |  
收藏
  |  
浏览/下载:108/0
  |  
提交时间:2019/11/10
FPGA
radiation hardening
single event upsets
heavy ions
error rates
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
会议论文
OAI收割
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
  |  
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/10/08
Charge sharing
single-event upset (SEU)
static random access memory
total ionizing dose (TID)
Advanced Extensible Crossbar Protocol for Connecting Multi-Cores and Shared-Memory on Chip
会议论文
OAI收割
Beijing,China, 2018,6.15-17
作者:
Hongyu,Meng
;
Donglin,Wang
;
Zijun,Liu
;
Yang,Guo
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/06
Interconnect
Crossbar
Multi-cores
Shared-memory
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:
Zheng, QW (Zheng, Qiwen)
;
Cui, JW (Cui, Jiangwei)
;
Yu, XF (Yu, Xuefeng)
;
Lu, W (Lu, Wu)
;
He, CF (He, Chengfa)
  |  
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2018/05/15
Static Noise Margin (Snm)
Static Random Access Memory (Sram)
Total Ionizing Dose (Tid)
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Guo, HX (Guo, Hongxia)[ 1 ]
;
Liu, J (Liu, Jie)[ 2 ]
  |  
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2018/09/27
Charge Sharing
Single-event Upset (Seu)
Static Random Access Memory
Total Ionizing Dose (Tid)