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  • 半导体物理 [68]
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浏览/检索结果: 共68条，第1-10条 帮助

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Impurity scattering and Friedel oscillations in monolayer black phosphorus 期刊论文  OAI收割
physical review b, 2016, 卷号: 94, 期号: 3, 页码: 035431
Yong-Lian Zou; Juntao Song; Chunxu Bai; Kai Chang
收藏  |  浏览/下载：19/0  |  提交时间：2017/03/10
Thermoelectric transport through a quantum dot with a magnetic impurity 期刊论文  OAI收割
chinese physics b, Chinese Physics B, 2013, 2013, 卷号: 22, 22, 期号: 11, 页码: 117303, 117303
作者:  Yu, Zhen;  Guo, Yu;  Zheng, Jun;  Chi, Feng
  |  收藏  |  浏览/下载：10/0  |  提交时间：2014/04/28
Effect of impurity ions configurations on the magnetic properties of Mn-doped ZnO 期刊论文  OAI收割
physica b-condensed matter, PHYSICA B-CONDENSED MATTER, 2012, 2012, 卷号: 407, 407, 期号: 5, 页码: 883-887, 883-887
作者:  Gao, HX;  Xia, JB
  |  收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17
Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen 期刊论文  OAI收割
journal of physics and chemistry of solids, Journal of Physics and Chemistry of Solids, 2011, 2011, 卷号: 72, 72, 期号: 6, 页码: 725-729, 725-729
作者:  Gai, Yanqin;  Tang, Gang;  Li, Jingbo;  Gai, Y.(yqgai@semi.ac.cn)
  |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507
作者:  Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L
  |  收藏  |  浏览/下载：42/5  |  提交时间：2011/07/05
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301
作者:  Wang, LG;  Shen, C;  Zheng, HZ;  Zhu, H;  Zhao, JH
  |  收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155
作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn
  |  收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Band-tail shape and transport near the metal-insulator transition in Si-doped 期刊论文  OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 12, 页码: art. no. 125202, Art. No. 125202
作者:  Misuraca J (Misuraca Jennifer);  Trbovic J (Trbovic Jelena);  Lu J (Lu Jun);  Zhao JH (Zhao Jianhua);  Ohno Y (Ohno Yuzo)
  |  收藏  |  浏览/下载：23/0  |  提交时间：2010/10/11
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 26, 页码: article no.262109, Article no.262109
作者:  Zhu YG;  Han LF;  Chen L;  Zhang XH;  Zhao JH
  |  收藏  |  浏览/下载：63/6  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文  OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 19, 页码: art. no. 193204, Art. No. 193204
作者:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai)
  |  收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27