中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [14]
采集方式
OAI收割 [14]
内容类型
期刊论文 [14]
发表日期
2010 [14]
学科主题
半导体物理 [14]
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学科主题:半导体物理
发表日期:2010
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Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 3, 页码: art. no. 033304, Art. No. 033304
作者:
Li J (Li Jun)
;
Chang K (Chang Kai)
;
Li, J, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: kchang@red.semi.ac.cn
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收藏
  |  
浏览/下载:60/1
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提交时间:2010/08/17
RELAXATION ANISOTROPY
Relaxation Anisotropy
Quantum-wells
Semiconductors
Systems
QUANTUM-WELLS
SEMICONDUCTORS
SYSTEMS
Dynamics of photo-enhanced magneto-crystalline anisotropy in diluted ferromagnetic GaMnAs
期刊论文
OAI收割
solid state communications, SOLID STATE COMMUNICATIONS, 2010, 2010, 卷号: 150, 150, 期号: 29-30, 页码: 1419-1421, 1419-1421
作者:
Luo J (Luo J.)
;
Zheng HZ (Zheng H. Z.)
;
Shen C (Shen C.)
;
Zhang H (Zhang H.)
;
Zhu K (Zhu K.)
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收藏
  |  
浏览/下载:109/1
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提交时间:2010/08/17
Semiconductors
Semiconductors
Magnetic Films
Time-resolved Kerr Rotation
Magnetic Linear Dichroism
Magnetic films
Time-resolved Kerr rotation
Magnetic linear dichroism
Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 8, 页码: art. no. 083704, Art. No. 083704
作者:
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
  |  
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/05/24
AUGMENTED-WAVE METHOD
Augmented-wave Method
Electronic-structure
Semiconductors
Films
Znse
Znte
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals
期刊论文
OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 2010, 卷号: 114, 114, 期号: 41, 页码: 17569-17573, 17569-17573
作者:
Meng XQ (Meng Xiuqing)
;
Tang LM (Tang Liming)
;
Li JB (Li Jingbo)
;
Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jbli@semi.ac.cn
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收藏
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浏览/下载:52/0
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提交时间:2010/11/02
THIN-FILMS
Thin-films
Quantum Dots
Ab-initio
Indium
Zno
Semiconductors
Activation
Oxidation
Electron
Energy
QUANTUM DOTS
AB-INITIO
INDIUM
ZNO
SEMICONDUCTORS
ACTIVATION
OXIDATION
ELECTRON
ENERGY
Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires
期刊论文
OAI收割
chemphyschem, CHEMPHYSCHEM, 2010, 2010, 卷号: 11, 11, 期号: 15, 页码: 3329-3332, 3329-3332
作者:
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
;
Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
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收藏
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浏览/下载:24/0
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提交时间:2010/12/05
SILICON NANOWIRES
Silicon Nanowires
Catalytic Growth
Band Offsets
Solar-cells
Semiconductors
Superlattices
Efficiency
CATALYTIC GROWTH
BAND OFFSETS
SOLAR-CELLS
SEMICONDUCTORS
SUPERLATTICES
EFFICIENCY
First principles study of N-N split interstitial in GaN nanowires
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2010, 2010, 卷号: 374, 374, 期号: 44, 页码: 4543-4547, 4543-4547
作者:
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Wang, ZG, Univ Elect Sci&Technol China, DeptApplPhys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
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收藏
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浏览/下载:18/0
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提交时间:2010/11/14
N-N split interstitials
N-n Split Interstitials
Gan Nanowires
First Principles Calculation
Semiconductors
Energy
GaN nanowires
First principles calculation
SEMICONDUCTORS
ENERGY
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 12, 页码: art. no. 125202, Art. No. 125202
作者:
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
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收藏
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浏览/下载:23/0
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提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
Persistent Photoconductivity
Dx Centers
Alxga1-xas
Gaas
Semiconductors
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 24, 页码: article no.242505, Article no.242505
作者:
Wang SL
;
Chen L
;
Meng KK
;
Xu PF
;
Meng HJ
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收藏
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浏览/下载:62/0
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提交时间:2011/07/05
MN
SEMICONDUCTORS
SPINTRONICS
ELECTRONICS
(GA,MN)AS
GAAS
Mn
Semiconductors
Spintronics
Electronics
Gaas
(Ga
Mn)As
First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions
期刊论文
OAI收割
computational materials science, COMPUTATIONAL MATERIALS SCIENCE, 2010, 2010, 卷号: 50, 50, 期号: 2, 页码: 344-348, 344-348
作者:
Wang ZG
;
Zhang CL
;
Li JB
;
Gao F
;
Weber WJ
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收藏
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浏览/下载:52/11
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提交时间:2011/07/05
GaN nanowires
Electronic properties
First principles
GAN NANOWIRES
AB-INITIO
EMISSION PROPERTIES
SEMICONDUCTORS
ARRAYS
Gan Nanowires
Electronic Properties
First Principles
Gan Nanowires
Ab-initio
Emission Properties
Semiconductors
Arrays
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 26, 页码: article no.262109, Article no.262109
作者:
Zhu YG
;
Han LF
;
Chen L
;
Zhang XH
;
Zhao JH
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收藏
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浏览/下载:63/6
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提交时间:2011/07/05
SEMICONDUCTORS
TEMPERATURE
GAAS
Semiconductors
Temperature
Gaas