机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 会议论文 [12]

发表日期

• 2005 [1]
• 2004 [1]
• 2003 [1]
• 2001 [1]
• 2000 [5]
• 1998 [2]
• 更多

学科主题

• 半导体物理 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 内容类型：会议论文    学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文  OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：220/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Electronic structure and optical property of semiconductor nanocrystallites 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 Xia JB; Chang K; Li SS 收藏  |  浏览/下载：35/0  |  提交时间：2010/11/15 semiconductor cluster  self-assembled quantum dot  diluted magnetic semiconductor  electronic structure  resonant tunneling  QUANTUM DOTS  EXCITON-STATES  SPHERES   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文  OAI收割 25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000 作者:  Tan PH 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 ELECTRIC-ARC TECHNIQUE  LARGE-SCALE  SCATTERING  SPECTRA  STOKES  MODES   Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Jiang DS;  Wang HL;  Wang HL;  Wang HL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 superlattices  GaAs/AlAs  electric field domains  tunnelling  OSCILLATIONS   Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates 会议论文  OAI收割 27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27), salt lake city, utah, jan 16-20, 2000 Yang Z; Sou IK; Chen YH 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 REFLECTANCE DIFFERENCE SPECTROSCOPY  ZNSE/GAAS INTERFACE  STATES  GAAS   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文  OAI收割 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 会议论文  OAI收割 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文  OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 Liu XL; Yuan HR; Lu DC; Wang XH 收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29 Mg-doped  AlGaN/GaN superlattices  resistivity  hole concentration  POLARIZATION   Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文  OAI收割 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 作者:  Liu J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 GaAs/AlAs  superlattices  transport  tunnelling  Landau level  NEGATIVE DIFFERENTIAL CONDUCTIVITY  LOW-FIELD MOBILITY  SEMICONDUCTOR SUPERLATTICE  TEMPERATURE-DEPENDENCE  CONDUCTANCE  TRANSPORT  LOCALIZATION  MINIBANDS