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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [37]
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OAI收割 [37]
内容类型
期刊论文 [34]
会议论文 [3]
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2011 [3]
2010 [2]
2009 [1]
2008 [5]
2006 [4]
2003 [3]
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学科主题
半导体物理 [37]
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Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54320, 54320
作者:
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/01/06
WELLS
RELAXATION
HOLE
PHOTOLUMINESCENCE
SEMICONDUCTORS
LOCALIZATION
TRANSITIONS
EXCITONS
CARRIERS
GROWTH
Wells
Relaxation
Hole
Photoluminescence
Semiconductors
Localization
Transitions
Excitons
Carriers
Growth
Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
OAI收割
journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391
作者:
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Raman Spectroscopy
Ultrathin Fe(3)o(4) Film
Crystal Orientation
Strain
Phonon Strain-shift Coefficient
Pulsed-laser Deposition
Thin-films
Spin-transport
Magnetite
Semiconductors
Spintronics
Scattering
Corrosion
Devices
Growth
First principles study of the electronic properties of twinned SiC nanowires
期刊论文
OAI收割
journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 1, 页码: 185-191, 185-191
作者:
Wang ZG
  |  
收藏
  |  
浏览/下载:100/6
  |  
提交时间:2011/07/05
Twinned SiC nanowires
Electronic properties
Ab initio
Modeling and simulation
SILICON-CARBIDE NANOWIRES
FIELD-EMISSION PROPERTIES
MOLECULAR-BEAM EPITAXY
INAS NANOWIRES
GROWTH
NANOTUBES
NITRIDE
DIFFUSION
NANORODS
ENERGY
Twinned Sic Nanowires
Electronic Properties
Ab Initio
Modeling And Simulation
Silicon-carbide Nanowires
Field-emission Properties
Molecular-beam Epitaxy
Inas Nanowires
Growth
Nanotubes
Nitride
Diffusion
Nanorods
Energy
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires
期刊论文
OAI收割
acta materialia, ACTA MATERIALIA, 2010, 2010, 卷号: 58, 58, 期号: 6, 页码: 1963-1971, 1963-1971
作者:
Wang ZG
;
Li JB
;
Gao F
;
Weber WJ
;
Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn
  |  
收藏
  |  
浏览/下载:62/1
  |  
提交时间:2010/04/22
Twinning
Twinning
Nanotructures
Fracture
Buckling
Molecular Dynamics
Chemical-vapor-deposition
Ab-initio Calculations
Beta-sic Nanowires
Low-temperature
Thin-films
Simulation
Elasticity
Nanotubes
Polytypes
Growth
Nanotructures
Fracture
Buckling
Molecular dynamics
CHEMICAL-VAPOR-DEPOSITION
AB-INITIO CALCULATIONS
BETA-SIC NANOWIRES
LOW-TEMPERATURE
THIN-FILMS
SIMULATION
ELASTICITY
NANOTUBES
POLYTYPES
GROWTH
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 19, 页码: art. no. 193204, Art. No. 193204
作者:
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
  |  
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/12/27
IMPURITIES
Impurities
Gaas1-xnx
Nitrogen
Gainnas
States
Traps
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Room Temperature Ferromagnetism of Mn Implanted AlInN
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A
;
Sharif R
;
Ali A
;
Zhu JJ
收藏
  |  
浏览/下载:248/25
  |  
提交时间:2010/03/08
MAGNETIC-PROPERTIES
SEMICONDUCTORS
GAN
CR
ALLOYS
GROWTH
FILMS
Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 193301
作者:
Li JB
收藏
  |  
浏览/下载:209/43
  |  
提交时间:2010/03/08
density functional theory
energy gap
enthalpy
gallium compounds
ground states
III-V semiconductors
indium compounds
Monte Carlo methods
nanowires
semiconductor quantum wires
wide band gap semiconductors
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107
Wang, BR
;
Sun, BQ
;
Ji, Y
;
Dou, XM
;
Xu, ZY
;
Wang, ZM
;
Salamo, GJ
收藏
  |  
浏览/下载:103/2
  |  
提交时间:2010/03/08
LOCALIZED STATES
ISLANDS
WIRES
SUPERLATTICES
ORGANIZATION
GAAS(100)
EXCITONS
GROWTH
DECAY
GAAS
Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots
期刊论文
OAI收割
epl, 2008, 卷号: 84, 期号: 5, 页码: art. no. 58007
作者:
Tan PH
收藏
  |  
浏览/下载:160/34
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
FERROMAGNETISM
GROWTH
ARRAYS
Effect on nitrogen acceptor as Mg is alloyed into ZnO
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110
Gai, YQ
;
Yao, B
;
Wei, ZP
;
Li, YF
;
Lu, YM
;
Shen, DZ
;
Zhang, JY
;
Zhao, DX
;
Fan, XW
;
Li, JB
;
Xia, JB
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/08
P-TYPE ZNO
II-VI
BAND-GAP
SEMICONDUCTORS
FILMS
MGXZN1-XO
EPITAXY