机构

• 半导体研究所 [23]

采集方式

• OAI收割 [23]

内容类型

• 期刊论文 [20]
• 会议论文 [3]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [5]
• 2008 [2]
• 2004 [1]
• 2003 [1]
• 更多

学科主题

• 半导体物理 [23]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文  OAI收割 ieee transactions on nanotechnology, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 2011, 卷号: 10, 10, 期号: 1, 页码: 53-58, 53-58 作者:  Lu XF;  Balocco C;  Yang FH;  Song AM;  Lu, XF, Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, Englandxiaofeng.lu@manchester.ac.uk   |  收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05 Atomic-force microscope (AFM)  nanolithography  self-switching diodes (SSDs)  2-D electron gas  CONDUCTING POLYMER-FILMS  NANOMETER-SCALE  LITHOGRAPHY  FABRICATION  SURFACES  DEVICES  NANOSTRUCTURES  Atomic-force Microscope (Afm)  Nanolithography  Self-switching Diodes (Ssds)  2-d Electron Gas  Conducting Polymer-films  Nanometer-scale  Lithography  Fabrication  Surfaces  Devices  Nanostructures   Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition 期刊论文  OAI收割 vacuum, VACUUM, 2010, 2010, 卷号: 84, 84, 期号: 11, 页码: 1280-1286, 1280-1286 作者:  Zhu BL (Zhu B. L.);  Zhao XZ (Zhao X. Z.);  Su FH (Su F. H.);  Li GH (Li G. H.);  Wu XG (Wu X. G.)   |  收藏  |  浏览/下载：89/2  |  提交时间：2010/07/05 ZnO  Zno  Pulsed Laser Deposition (Pld)  Annealing Treatment  Photoluminescence (Pl)  Oxide Thin-films  Substrate-temperature  Oxygen-pressure  Electrical-properties  Pld Technique  Al Films  Emission  Pulsed laser deposition (PLD)  Annealing treatment  Photoluminescence (PL)  OXIDE THIN-FILMS  SUBSTRATE-TEMPERATURE  OXYGEN-PRESSURE  ELECTRICAL-PROPERTIES  PLD TECHNIQUE  AL FILMS  EMISSION   Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912 Wang WZ; Deng JJ; Lu J; Sun BQ; Wu XG; Zhao JH 收藏  |  浏览/下载：213/74  |  提交时间：2010/03/08 annealing  Curie temperature  ferromagnetic materials  gallium arsenide  III-V semiconductors  magnetic susceptibility  magnetisation  manganese compounds  nanofabrication  nanostructured materials  RKKY interaction  semiconductor thin films  semimagnetic semiconductors  spin dynamics   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Lattice polarity detection of InN by circular photogalvanic effect 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902 Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A 收藏  |  浏览/下载：64/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  nondestructive testing  photoconductivity  radiation effects  semiconductor thin films  wide band gap semiconductors   Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911 作者:  Chen L 收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08 annealing  gallium arsenide  iron  magnetic anisotropy  magnetic epitaxial layers  magnetisation  molecular beam epitaxial growth  transmission electron microscopy  X-ray diffraction   Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505 作者:  Chen L;  Qian X 收藏  |  浏览/下载：84/39  |  提交时间：2010/03/08 annealing   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1034-1037 Hao, XP; Wang, BY; Yu, RS; Wei, L; Wang, H; Zhao, DG; Hao, WC 收藏  |  浏览/下载：70/2  |  提交时间：2010/03/08 SILICON-OXIDE FILMS  POSITRON-ANNIHILATION  POROUS SILICON  THIN-FILMS  PHOTOLUMINESCENCE  LAYERS  BEAM   Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文  OAI收割 solid state communications, 2004, 卷号: 132, 期号: 10, 页码: 707-711 作者:  Tan PH;  Jiang DS 收藏  |  浏览/下载：159/55  |  提交时间：2010/03/09 GaAsSbN epilayer