中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [18]
采集方式
OAI收割 [18]
内容类型
期刊论文 [16]
会议论文 [2]
发表日期
2014 [1]
2011 [3]
2010 [1]
2009 [1]
2006 [1]
2005 [3]
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学科主题
半导体物理 [18]
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Demonstrating nonlocality-induced teleportation through Majorana bound states in a semiconductor nanowire
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2014, 2014, 卷号: 378, 378, 期号: 13, 页码: 937-940, 937-940
作者:
Wang, PY
;
Cao, YS
;
Gong, M
;
Li, SS
;
Li, XQ
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2015/03/19
Quantum coherence and entanglement induced by the continuum between distant localized states
期刊论文
OAI收割
physical review a, PHYSICAL REVIEW A, 2011, 2011, 卷号: 83, 83, 期号: 4, 页码: article no.42112, Article no.42112
作者:
Ping J
;
Li XQ
;
Gurvitz S
;
Ping, J, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. shmuel.gurvitz@weizmann.ac.il
  |  
收藏
  |  
浏览/下载:44/4
  |  
提交时间:2011/07/05
RELAXATION
SYSTEMS
WELLS
DECAY
Relaxation
Systems
Wells
Decay
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301
作者:
Wang, LG
;
Shen, C
;
Zheng, HZ
;
Zhu, H
;
Zhao, JH
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Charged Acceptor Centre
Screening Effect
Exchange Interaction
Shallow Acceptor States
Gallium-arsenide
Semiconductors
Field
Spin and momentum filtering of electrons on the surface of a topological insulator
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 16, 页码: article no.162101, Article no.162101
作者:
Wu ZH
;
Peeters FM
;
Chang K
;
Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. zhwu@semi.ac.cn
  |  
收藏
  |  
浏览/下载:27/3
  |  
提交时间:2011/07/05
SINGLE DIRAC CONE
GRAPHENE
BI2TE3
PHASE
Single Dirac Cone
Graphene
Bi2te3
Phase
Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 81, 81, 期号: 23, 页码: art. no. 235323, Art. No. 235323
作者:
Zhang LB (Zhang L. B.)
;
Zhai F (Zhai Feng)
;
Chang K (Chang Kai)
;
Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.
  |  
收藏
  |  
浏览/下载:145/8
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提交时间:2010/07/18
INSULATOR
Insulator
Surface
Phase
SURFACE
PHASE
Resonant tunneling through S- and U-shaped graphene nanoribbons
期刊论文
OAI收割
nanotechnology, 2009, 卷号: 20, 期号: 41, 页码: art. no. 415203
作者:
Wu ZH
收藏
  |  
浏览/下载:55/2
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提交时间:2010/03/08
CONDUCTANCE
VOLTAGE
RIBBONS
Recombination property of nitrogen-acceptor-bound states in ZnO
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.046101
Yang XD
;
Xu ZY
;
Sun Z
;
Sun BQ
;
Ding L
;
Wang FZ
;
Ye ZZ
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
P-TYPE ZNO
OPTICAL-PROPERTIES
EXCITON FORMATION
PHOTOLUMINESCENCE
FILMS
SPECTROSCOPY
DYNAMICS
IMPURITY
ENERGY
A new type of photoelectric response in a double barrier structure with a wide quantum well
期刊论文
OAI收割
chinese physics letters, 2005, 卷号: 22, 期号: 5, 页码: 1222-1224
Zhou X
;
Zheng HZ
收藏
  |  
浏览/下载:33/12
  |  
提交时间:2010/03/17
QUASI-BOUND STATES
Recombination kinetics of Te isoelectronic centers in ZnSTe
期刊论文
OAI收割
applied physics letters, 2005, 卷号: 86, 期号: 5, 页码: art.no.052107
Yang XD
;
Xu ZY
;
Sun Z
;
Sun BQ
;
Li GH
;
Sou IK
;
Ge WK
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2010/03/17
ZINC-SULFIDE
Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001
期刊论文
OAI收割
physical review b, 2005, 卷号: 71, 期号: 4, 页码: art.no.045213
Ma BS
;
Su FH
;
Ding K
;
Li GH
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/03/17
ELECTRONIC-STRUCTURE