机构

• 半导体研究所 [84]

采集方式

• OAI收割 [84]

内容类型

• 期刊论文 [69]
• 会议论文 [15]

发表日期

• 2013 [1]
• 2011 [5]
• 2010 [6]
• 2009 [1]
• 2008 [2]
• 2007 [2]
• 更多

学科主题

• 半导体材料 [84]

筛选

浏览/检索结果: 共84条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 The fabrication of large-area upgraded metallurgical grade multi-crystalline silicon solar cells in a production line 期刊论文  OAI收割 materials science forum, 2013, 卷号: 743-744, 页码: 863-869 Chen, Teng; Zhao, Youwen; Dong, Zhiyuan; Wang, Jun; Liu, Tong; Xie, Hui 收藏  |  浏览/下载：21/0  |  提交时间：2014/05/16 Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113 Jin, L; Zhou, HY; Qu, SC; Wang, ZG 收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06 Patterned substrate  Ion implantation  Ordered nanodots  Anodic aluminum oxide  QUANTUM DOTS  ISLANDS  GROWTH  SEMICONDUCTORS  NANOSTRUCTURES  COMPUTATION  INGAAS   Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  OAI收割 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：68/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films 期刊论文  OAI收割 optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 40545, 页码: 112-115 Hao HY; Xing J; Li WM; Zeng XB; Kong GL; Liao XB 收藏  |  浏览/下载：81/3  |  提交时间：2011/07/06 Nanocrystalline silicon thin films  Structure  Photoelectrical properties  Stability  MICROCRYSTALLINE SILICON  TRANSITION FILMS  SOLAR-CELLS  HYDROGEN   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145 作者:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ   |  收藏  |  浏览/下载：76/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE  Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride   The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994 Song HP (Song H. P.); Zheng GL (Zheng G. L.); Yang AL (Yang A. L.); Guo Y (Guo Y.); Wei HY (Wei H. Y.); Li CM (Li C. M.); Yang SY (Yang S. Y.); Liu XL (Liu X. L.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/27 ZnO  In2O3  MOCVD  Photoelectron spectroscopies  IN2O3-ZNO FILMS  TRANSPARENT  OXIDE  SEMICONDUCTORS  INN   Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546 Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |  浏览/下载：67/8  |  提交时间：2011/07/05 IONIZED-IMPURITY-SCATTERING  COMPOSITIONAL INHOMOGENEITY  PHASE-SEPARATION  QUANTUM-WELLS  ALLOY  CATHODOLUMINESCENCE  HETEROSTRUCTURES  SEMICONDUCTORS  TRANSPORT  MOBILITY   IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文  OAI收割 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者:  Hao GD 收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05 Strain effect  optical anisotropy  A-plane  R-plane  CONTINUOUS-WAVE OPERATION  LIGHT-EMITTING-DIODES  LASER-DIODES  POLARIZATION ANISOTROPY  QUANTUM-WELLS  SEMICONDUCTORS   Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文  OAI收割 rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172 作者:  Wei TB;  Yang JK;  Duan RF 收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05 GaN  HVPE  freestanding thick films  stress release  photoluminescence  VAPOR-PHASE EPITAXY  GROWTH  PRESSURE  HVPE