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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [75]
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OAI收割 [75]
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期刊论文 [67]
会议论文 [8]
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2011 [2]
2010 [2]
2009 [4]
2008 [5]
2007 [1]
2006 [6]
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半导体材料 [75]
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Growth Simulations of Self-Assembled Nanowires on Stepped Substrates
期刊论文
OAI收割
ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Liang S
;
Kong DH
;
Zhu HL
;
Wang W
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/02/06
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
SURFACE MIGRATION
FABRICATION
GAAS(100)
ISLANDS
WIRES
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
OAI收割
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Formation trends of ordered self-assembled nanoislands on stepped substrates
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Kong DH (Kong D. H.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/14
CHEMICAL-VAPOR-DEPOSITION
INAS QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
GAAS
SURFACES
ISLANDS
GROWTH
FABRICATION
MIGRATION
ARRAYS
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112
Song YF (Song Yafeng)
;
Lu YW (Lu Yanwu)
;
Zhang BA (Zhang Biao)
;
Xu XQ (Xu Xiaoqing)
;
Wang J (Wang Jun)
;
Guo Y (Guo Yan)
;
Shi K (Shi Kai)
;
Li ZW (Li Zhiwei)
;
Liu XL (Liu Xianglin)
;
Yang SY (Yang Shaoyan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/12/05
OPTICAL PHONON ENERGY
INVERSION-LAYERS
TRANSITIONS
RELAXATION
LASERS
STATES
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Growth behavior of AlInGaN films
期刊论文
OAI收割
journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
收藏
  |  
浏览/下载:216/66
  |  
提交时间:2010/03/08
Scanning electron microscope
Strain
X-ray diffraction
AlInGaN
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:
Yang JK
;
Wei TB
;
Duan RF
收藏
  |  
浏览/下载:73/3
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
DISLOCATIONS
SUBSTRATE
LAYER
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
OAI收割
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
收藏
  |  
浏览/下载:43/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
The growth temperatures dependence of optical and electrical properties of InN films
期刊论文
OAI收割
science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Liu, B
;
Zhang, R
;
Xie, ZL
;
Xiu, XQ
;
Li, L
;
Kong, JY
;
Yu, HQ
;
Han, P
;
Gu, SL
;
Shi, Y
;
Zheng, YD
;
Tang, CG
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:48/2
  |  
提交时间:2010/03/08
metalorganic chemical vapor deposition
X-ray diffraction
photoluminescence
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition
期刊论文
OAI收割
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL
;
Sun, XH
;
Zha, XZ
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
PLD
ZnO films
substrate temperature
crystal quality
grain size
optical properties