机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2007 [1]
• 2003 [3]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908 Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14 OXYGEN  GATE  DIFFUSION  FILMS   Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866 Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG 收藏  |  浏览/下载：64/5  |  提交时间：2010/03/08 III-V semiconductors  quantum dots  scanning electron microscopy  selective etching   Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160 作者:  Jiang DS 收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12 interdiffusion  post-annealing  quantum wells  GaInNAs/GaAs  MOLECULAR-BEAM EPITAXY  CARRIER LOCALIZATION  GAINNAS  LUMINESCENCE  ORIGIN  GAASN   Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 diffusion  interfaces  substrates  molecular beam epitaxy  phosphides  semiconducting indium phosphide  UNDOPED SEMIINSULATING INP  CHEMICAL-VAPOR-DEPOSITION  PHOSPHIDE VAPOR  FE  INTERFACE  PHOTOLUMINESCENCE  WAFER  UNIFORMITY  DIFFUSION  PRESSURE   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者:  Xu B 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 low dimensional structures  strain  molecular beam epitaxy  quantum dots  ELECTRONIC-STRUCTURE  PHOTOLUMINESCENCE  INTERDIFFUSION  TRANSITIONS  SPECTRA   Carbonization process of Si(100) by ion-beam bombardment 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 233, 期号: 3, 页码: 446-450 Liao MY; Chai CL; Yao ZY; Yang SY; Liu ZK; Wang ZG 收藏  |  浏览/下载：83/8  |  提交时间：2010/08/12 diffusion  growth models  ion bombardment  reflection high energy electron diffraction  physical vapor phase deposition  semiconducting silicon compounds  CUBIC GAN  GROWTH  DEPOSITION  EPITAXY  SILICON  DIAMOND   Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 microgravity  Chinese recoverable satellite  GaSb  InxGa1-xSb  dissolution  recrystallization  orientation  FLOATING-ZONE GROWTH  INXGA1-XSB CRYSTALS  GASB  MELT  INSB  DIFFUSION  SILICON  CONVECTION  STRIATION