机构

• 半导体研究所 [38]

采集方式

• OAI收割 [38]

内容类型

• 期刊论文 [36]
• 会议论文 [2]

发表日期

• 2011 [2]
• 2009 [2]
• 2008 [4]
• 2007 [3]
• 2006 [5]
• 2005 [4]
• 更多

学科主题

• 半导体材料 [38]

筛选

浏览/检索结果: 共38条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102 作者:  Pan X;  Hou QF 收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05 ELECTRON-MOBILITY TRANSISTORS  AL-CONTENT  STRESS-CONTROL  PHASE EPITAXY  ALGAN  BUFFER  LAYERS  HETEROSTRUCTURES  INTERLAYERS  SILICON   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381 作者:  Liu J;  Zhu H 收藏  |  浏览/下载：72/2  |  提交时间：2010/03/08 HEMT  2DEG   Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文  OAI收割 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX 收藏  |  浏览/下载：92/1  |  提交时间：2010/03/08 GaN  HEMT  2DEG  mobility  polarization   Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1258-1262 作者:  Yang Xiaoli;  Wang Yu 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23 Polymerization of ionic liquid-based microemulsions: A versatile method for the synthesis of polymer electrolytes 期刊论文  OAI收割 macromolecules, 2008, 卷号: 41, 期号: 10, 页码: 3389-3392 Yu, SM; Yan, F; Zhang, XW; You, JB; Wu, PY; Lu, JM; Xu, QF; Xia, XW; Ma, GL 收藏  |  浏览/下载：65/1  |  提交时间：2010/03/08 ROTATIONAL RELAXATION  BEHAVIOR  MICELLES  STYRENE  PHASE  COUMARIN-153  SURFACTANTS  SOLVATION  CATALYSIS  DYNAMICS   Spin precession induced by an effective magnetic field in a two-dimensional electron gas 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 23, 页码: art. no. 233108 作者:  Jia CH 收藏  |  浏览/下载：259/47  |  提交时间：2010/03/08 quantum wells  spin polarised transport  spin-orbit interactions  two-dimensional electron gas   AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 2DEG   MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 2DEG