机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [12]
• 会议论文 [2]

发表日期

• 2011 [2]
• 2010 [2]
• 2009 [1]
• 2008 [1]
• 2007 [1]
• 2006 [3]
• 更多

学科主题

• 半导体材料 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文  OAI收割 european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102 Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ 收藏  |  浏览/下载：34/0  |  提交时间：2012/01/06 ALGAN/GAN/INGAN/GAN DH-HEMTS  FIELD-EFFECT TRANSISTORS  ALGAN/GAN  POLARIZATION  PASSIVATION  HFETS  GHZ   In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703 Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14 BARRIER STRUCTURE  MAGNETIC-FIELD  POLARIZATION  CONDUCTANCE  DEVICE   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX 收藏  |  浏览/下载：92/1  |  提交时间：2010/03/08 GaN  HEMT  2DEG  mobility  polarization   Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2007, 卷号: 91, 期号: 7, 页码: art.no.071920 Tang YQ; Shen B; He XW; Han K; Tang N; Chen WH; Yang ZJ; Zhang GY; Chen YH; Tang CG; Wang ZG; Cho KS; Chen YF 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29 POLARIZATION   Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765 Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 AlGaN/AlN/GaN  two-dimensional electron gas  MOCVD  ALGAN/GAN HETEROSTRUCTURES  POLARIZATION  TRANSISTORS  GANHEMTS  GAS   Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文  OAI收割 journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273 Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  ZINC-OXIDE FILMS  MOLECULAR-BEAM EPITAXY  SAPPHIRE  GROWTH   Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文  OAI收割 journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 ELECTRONIC-STRUCTURE CALCULATIONS  II-VI SEMICONDUCTORS  THIN-FILMS  PHOTOELECTRON-SPECTROSCOPY  DOPED ZNO  1ST-PRINCIPLES  CONDUCTION  STATES