机构

• 半导体研究所 [25]

采集方式

• OAI收割 [25]

内容类型

• 期刊论文 [21]
• 会议论文 [4]

发表日期

• 2011 [4]
• 2009 [1]
• 2008 [2]
• 2006 [2]
• 2005 [3]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [25]

筛选

浏览/检索结果: 共25条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010 作者:  Yang T;  Yang XG;  Wang KF 收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05 HIGH-DENSITY  TEMPERATURE-DEPENDENCE  SELF-FORMATION  LAYERS  WELL  MBE   Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage 期刊论文  OAI收割 carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124 Zhu XF; Li LX; Huang SL; Wang ZG; Lu GQ; Sun CH; Wang LZ 收藏  |  浏览/下载：25/3  |  提交时间：2011/07/05 IRRADIATION  NANOCAVITY   Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文  OAI收割 rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251 作者:  Li GK 收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05 vanadium dioxide  infrared transition  diffraction effect  dual ion beam sputtering  annealing   Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method 期刊论文  OAI收割 journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727 Zhao H; Wang SM; Zhao QX; Sadeghi M; Larsson A 收藏  |  浏览/下载：180/35  |  提交时间：2010/03/08 Quantum well  Dilute nitride  Rapid thermal annealing  InGaAs  GaInNAs   Influence of electron irradiation on hydrothermally grown zinc oxide single crystals 期刊论文  OAI收割 semiconductor science and technology, 2008, 卷号: 23, 期号: 9, 页码: art. no. 095028 Lu LW; So CK; Zhu CY; Gu QL; Li CJ; Fung S; Brauer G; Anwand W; Skorupa W; Ling CC 收藏  |  浏览/下载：110/1  |  提交时间：2010/03/08 SCHOTTKY CONTACTS   Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z 收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09 QUANTUM-WELLS  SPIN   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文  OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation 期刊论文  OAI收割 diamond and related materials, 2005, 卷号: 14, 期号: 9, 页码: 1482-1488 作者:  Zhang XW 收藏  |  浏览/下载：52/14  |  提交时间：2010/03/17 cubic boron nitride