中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [30]
采集方式
OAI收割 [30]
内容类型
期刊论文 [27]
会议论文 [3]
发表日期
2011 [2]
2009 [2]
2008 [1]
2006 [2]
2005 [2]
2004 [1]
更多
学科主题
半导体材料 [30]
筛选
浏览/检索结果:
共30条,第1-10条
帮助
限定条件
学科主题:半导体材料
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
OAI收割
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
收藏
  |  
浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:
Zhang ML
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/07
GaN
Ferromagnetic
Implantation
Annealing
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2010/04/03
annealing
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
OAI收割
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
收藏
  |  
浏览/下载:180/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition
期刊论文
OAI收割
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL
;
Sun, XH
;
Zha, XZ
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
PLD
ZnO films
substrate temperature
crystal quality
grain size
optical properties
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
OAI收割
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
OAI收割
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC
期刊论文
OAI收割
chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 599-603
Xin G
;
Sun, GS
;
Li JM
;
Zhang YX
;
Lei W
;
Zhao WS
;
Zeng YP
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/03/17
ion implantation
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
期刊论文
OAI收割
journal of crystal growth, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:67/18
  |  
提交时间:2010/03/17
annealing
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
期刊论文
OAI收割
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH
;
Liao XB
;
Diao HW
;
Kong GL
;
Zeng XB
;
Xu YY
收藏
  |  
浏览/下载:31/3
  |  
提交时间:2010/03/09
annealing