机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2009 [2]
• 2007 [1]
• 2004 [1]
• 2003 [1]
• 2002 [4]
• 2001 [2]
• 更多

学科主题

• 半导体物理 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105 作者:  Zhang XW;  Yin ZG;  You JB 收藏  |  浏览/下载：99/13  |  提交时间：2010/03/08 atomic force microscopy  field emission  hydrogen  II-VI semiconductors  plasma materials processing  sputter deposition  wide band gap semiconductors  work function  zinc compounds   The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 3, 页码: 765-768 Wang BZ; Wang XL; Wang XY; Guo LC; Wang XH; Xiao HL; Liu HX 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29 LIGHT-EMITTING-DIODES   Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films 期刊论文  OAI收割 vacuum, 2004, 卷号: 74, 期号: 1, 页码: 69-75 Wei WS; Wang TM; Zhang CX; Li GH; Han HX; Ding K 收藏  |  浏览/下载：181/44  |  提交时间：2010/03/09 hydrogenated nanocrystalline silicon film   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  OAI收割 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES   Study on optical band gap of boron-doped nc-Si : H film 期刊论文  OAI收割 international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4327-4330 Wei WS; Wang TM; Zhang CX; Li GH; Han HX; Ding K 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 AMORPHOUS-SILICON   Micro-Raman study on hydrogenated protocrystalline silicon films 期刊论文  OAI收割 acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815 Zhang SB; Liao XB; An L; Yang FH; Kong GL; Wang YQ; Xu YY; Chen CY; Diao HW 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 amorphous silicon  film  Raman scattering  microstructure  SI-H FILMS  MICROCRYSTALLINE SILICON  AMORPHOUS SI  LIGHT-SCATTERING  SPECTRA   Determination of oxidation states in magnetic multilayers 期刊论文  OAI收割 chinese physics letters, 2002, 卷号: 19, 期号: 2, 页码: 266-268 Yu GH; Li MH; Zhu FW; Chai CL; Lai WY 收藏  |  浏览/下载：84/4  |  提交时间：2010/08/12 EXCHANGE-ANISOTROPY  NIO  FILMS   Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering 期刊论文  OAI收割 chinese physics, 2001, 卷号: 10, 期号: suppl.s., 页码: s36-s39 Liu JW; Xie FQ; Zhong DY; Wang EG; Liu WX; Li SF; Yang H 收藏  |  浏览/下载：88/7  |  提交时间：2010/08/12 luminescence  SiC  nanocrystalline film  rf sputtering  RAMAN-SCATTERING