机构

• 半导体研究所 [19]

采集方式

• OAI收割 [19]

内容类型

• 期刊论文 [18]
• 会议论文 [1]

发表日期

• 2016 [1]
• 2015 [3]
• 2014 [5]
• 2013 [4]
• 2012 [2]
• 2011 [1]
• 更多

学科主题

• 半导体器件 [19]
• 光电子学 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共19条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文  OAI收割 solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015 Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Yanan Guo; Xuecheng Wei; Junxi Wang; Jinmin Li 收藏  |  浏览/下载：51/0  |  提交时间：2016/06/02 Lattice Selective Growth of Graphene on Sapphire Substrate 期刊论文  OAI收割 journal of physical chemistry c, Journal of Physical Chemistry C, 2015, 2015, 卷号: 119, 119, 期号: 1, 页码: 426-430, 426-430 作者:  Gang Wang;  Yun Zhao;  Ya Deng;  Wenbin Huang;  Xiaokun Fan   |  收藏  |  浏览/下载：35/0  |  提交时间：2016/04/15 Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes 期刊论文  OAI收割 optics express, Optics Express, 2015, 2015, 卷号: 23, 23, 期号: 15, 页码: a957-a965, A957-A965 作者:  Liang Shan;  Tongbo Wei;  Yuanping Sun;  Yonghui Zhang;  Aigong Zhen   |  收藏  |  浏览/下载：10/0  |  提交时间：2016/04/15 Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching 期刊论文  OAI收割 journal of vacuum science & technology b, Journal of Vacuum Science & Technology B, 2015, 2015, 卷号: 33, 33, 页码: 032402, 032402 作者:  Chong Geng;  Qingfeng Yan;  Peng Dong;  Liang Shan;  Chengxiao Du   |  收藏  |  浏览/下载：14/0  |  提交时间：2016/04/15 Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2014, 2014, 卷号: 387, 387, 页码: 101-105, 101-105 作者:  Yang, JK;  Wei, TB;  Huo, ZQ;  Hu, Q;  Zhang, YH   |  收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth 期刊论文  OAI收割 crystengcomm, CRYSTENGCOMM, 2014, 2014, 卷号: 16, 16, 期号: 21, 页码: 4562-4567, 4562-4567 作者:  Yang, JK;  Wei, TB;  Huo, ZQ;  Zhang, YH;  Hu, Q   |  收藏  |  浏览/下载：21/0  |  提交时间：2015/05/11 The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing 期刊论文  OAI收割 aip advances, AIP ADVANCES, 2014, 2014, 卷号: 4, 4, 期号: 2, 页码: 027123, 027123 作者:  Zhang, YH;  Wei, TB;  Wang, JX;  Lan, D;  Chen, Y   |  收藏  |  浏览/下载：14/0  |  提交时间：2015/03/20 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2014, 2014, 卷号: 395, 395, 页码: 9-13, 9-13 作者:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP   |  收藏  |  浏览/下载：29/0  |  提交时间：2015/03/25 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2014, 2014, 卷号: 395, 395, 页码: 9-13, 9-13 作者:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP   |  收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25 Mechanisms in Thermal Stress Aided Electroless Etching of GaN Grown on Sapphire and Approaches to Vertical Devices 期刊论文  OAI收割 rsc adv., RSC Adv., 2013, 2013, 卷号: 3, 3, 页码: 10934-10943, 10934-10943 作者:     |  收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09