机构

• 半导体研究所 [24]

采集方式

• OAI收割 [24]

内容类型

• 期刊论文 [16]
• 会议论文 [8]

发表日期

• 2017 [1]
• 2013 [1]
• 2011 [4]
• 2009 [2]
• 2008 [2]
• 2007 [2]
• 更多

学科主题

• 半导体材料 [24]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944 作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen 收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01 Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method 期刊论文  OAI收割 materials science forum, 2013, 页码: 740-742 Lin Dong; Liu Zheng; Xingfang Liu 收藏  |  浏览/下载：8/0  |  提交时间：2014/05/16 High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301 作者:  Liu XF 收藏  |  浏览/下载：37/3  |  提交时间：2011/07/05 4H-SiC  Raman scattering  LOPC modes  transport properties  SILICON-CARBIDE  LIGHT  GAP   Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002 Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：27/0  |  提交时间：2012/06/14 Aluminum  Annealing  Ion implantation  Pressure effects  Semiconducting silicon compounds  Silicon carbide  Surface roughness   Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001 Yan, Guoguo; Sun, Guosheng; Wu, Hailei; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang 收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14 Chemical vapor deposition  Deposition  Electric resistance  Epitaxial growth  Film growth  Sheet resistance  Silicon carbide  Silicon wafers   In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP 收藏  |  浏览/下载：54/0  |  提交时间：2010/03/09 Silicon Carbide  Aluminum Nitride  buffer layer  LPCVD   Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文  OAI收割 3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008 Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM 收藏  |  浏览/下载：49/0  |  提交时间：2010/03/09 bulge test fracture property  silicon carbide thin films  Weibull distribution function   Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane 期刊论文  OAI收割 journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 2, 页码: 453-461 Zhou, W; Yang, JL; Sun, GS; Liu, XF; Yang, FH; Li, JM 收藏  |  浏览/下载：48/0  |  提交时间：2010/03/08 bulge test  fracture property  microelectromechanical systems (MEMS)  silicon carbide (SiC) thin films  Weibull distribution function