机构

• 半导体研究所 [54]

采集方式

• OAI收割 [54]

内容类型

• 期刊论文 [48]
• 会议论文 [6]

发表日期

• 2016 [1]
• 2012 [1]
• 2011 [5]
• 2010 [4]
• 2009 [2]
• 2008 [6]
• 更多

学科主题

• 半导体材料 [54]

筛选

浏览/检索结果: 共54条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 A Buckling-Based Method for Measuring the Strain-Photonic Coupling Effect of GaAs Nanoribbons 期刊论文  OAI收割 acs nano, 2016, 卷号: 10, 期号: 9, 页码: 8199-8206 Yuxuan Wang; Ying Chen; Haicheng Li; Xiaomin Li; Hang Chen; Honghong Su; Yuan Lin; Yun Xu; Guofeng Song; Xue Feng 收藏  |  浏览/下载：27/0  |  提交时间：2017/03/16 Spectra of Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in GaAs/AlGaAs quantum wells and their behaviors under external strain 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 100, 期号: 15, 页码: 152110 Yu, JL; Chen, YH; Liu, Y; Jiang, CY; Ma, H; Zhu, LP 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/17 Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文  OAI收割 physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.121302 Plumhof JD; Krapek V; Ding F; Jons KD; Hafenbrak R; Klenovsky P; Herklotz A; Dorr K; Michler P; Rastelli A; Schmidt OG 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 ENTANGLED PHOTON PAIRS  SEMICONDUCTOR  SPIN   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   GaN grown with InGaN as a weakly bonded layer 期刊论文  OAI收割 crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585 作者:  Wei HY;  Song HP 收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SI(001) SUBSTRATE  STRAIN  EPITAXY   Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文  OAI收割 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Pan X 收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  ALN INTERLAYERS  FILMS  STRESS  LAYERS  DISLOCATIONS  REDUCTION  DENSITY  DIODES   Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文  OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100 Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG 收藏  |  浏览/下载：25/0  |  提交时间：2012/01/06 GaN  MOCVD  Si(111)  AlN  VAPOR-PHASE EPITAXY  LAYERS  SUBSTRATE  MOCVD  STRESS   In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516 Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.) 收藏  |  浏览/下载：293/18  |  提交时间：2010/08/17 MOLECULAR-BEAM EPITAXY  STRAIN RELAXATION  GROWTH TEMPERATURE  INTERFACE  ALLOYS  GAAS  HETEROSTRUCTURES  MICROSTRUCTURE  GANXAS1-X  NITROGEN   Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504 Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：212/46  |  提交时间：2010/10/11 INAS/ALSB QUANTUM-WELLS  LOW-POWER APPLICATIONS  HEMTS  MODULATION  HETEROSTRUCTURES  TECHNOLOGY  CHANNEL  VOLTAGE  MASS   Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 18, 页码: art. no. 181904 Yin CM (Yin Chunming); Shen B (Shen Bo); Zhang Q (Zhang Qi); Xu FJ (Xu Fujun); Tang N (Tang Ning); Cen LB (Cen Longbin); Wang XQ (Wang Xinqiang); Chen YH (Chen Yonghai); Yu JL (Yu Jinling) 收藏  |  浏览/下载：28/0  |  提交时间：2010/12/05