机构

• 半导体研究所 [53]

采集方式

• OAI收割 [52]
• iSwitch采集 [1]

内容类型

• 期刊论文 [50]
• 会议论文 [3]

发表日期

• 2015 [1]
• 2013 [1]
• 2011 [7]
• 2010 [6]
• 2009 [3]
• 2008 [2]
• 更多

学科主题

• 半导体物理 [23]
• 半导体材料 [15]
• 光电子学 [13]
• 半导体化学 [1]

筛选

浏览/检索结果: 共53条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Efficient 1.54-μm emission through Eu2 þ sensitization of Er3 þ in thin films of Eu2 þ/Er3 þ codoped barium strontium silicate under broad ultraviolet light excitation 期刊论文  OAI收割 Journal of Luminescence, 2015, 卷号: 157, 页码: 193–196 Leliang Li; Jun Zheng; Yuhua Zuo; Buwen Cheng; Qiming Wang 收藏  |  浏览/下载：22/0  |  提交时间：2016/03/23 First-principles study on strontium titanate for visible light photocatalysis 期刊论文  OAI收割 chemical physics letters, CHEMICAL PHYSICS LETTERS, 2013, 2013, 卷号: 555, 555, 页码: 141-144, 141-144 作者:  Liu, Hongfei;  Dong, Huafeng;  Meng, Xiuqing;  Wu, Fengmin   |  收藏  |  浏览/下载：10/0  |  提交时间：2013/10/08 Valence band offset of wurtzite inn/srtio3 heterojunction measured by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Nanoscale research letters, 2011, 卷号: 6, 页码: 4 作者:  Li, Zhiwei;  Zhang, Biao;  Wang, Jun;  Liu, Jianming;  Liu, Xianglin 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows 期刊论文  OAI收割 applied physics a: materials science and processing, 2011, 页码: 1-5 Jia, C.H.; Chen, Y.H.; Zhang, B.; Liu, X.L.; Yang, S.Y.; Zhang, W.F.; Wang, Z.G. 收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14 Absorption  Absorption spectroscopy  Crystal atomic structure  Epitaxial growth  Metallorganic chemical vapor deposition  Optical properties  Organic chemicals  Strontium alloys  Strontium titanates  X ray diffraction  Zinc sulfide   Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507 Yu X; Gu YX; Wang Q; Wei X; Chen LH 收藏  |  浏览/下载：65/4  |  提交时间：2011/07/06 type-II 'W' quantum well  Burt-Foreman Hamiltonian  finite element methods  LASERS  ALLOYS   Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文  OAI收割 journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966 Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM 收藏  |  浏览/下载：54/6  |  提交时间：2011/07/05 Silicon carbide  Thin films  Crystal structure  Electronic properties  THIN-FILMS  SILICON  PHOTOLUMINESCENCE  SUPERLATTICE  ALLOYS   Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108 作者:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW   |  收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE  Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe   Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文  OAI收割 physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314 作者:  Wang H 收藏  |  浏览/下载：121/5  |  提交时间：2010/04/28 GAN  ALLOYS