机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [6]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2009 [1]
• 2006 [1]
• 2003 [1]
• 2002 [2]
• 2001 [2]
• 更多

学科主题

• 半导体材料 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage 期刊论文  OAI收割 carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124 Zhu XF; Li LX; Huang SL; Wang ZG; Lu GQ; Sun CH; Wang LZ 收藏  |  浏览/下载：25/3  |  提交时间：2011/07/05 IRRADIATION  NANOCAVITY   Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921 Sun LL; Yan FW; Zhang HX; Wang JX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载：99/0  |  提交时间：2010/04/03 annealing   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：82/19  |  提交时间：2010/08/12 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 766-769 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：97/14  |  提交时间：2010/08/12 annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  STRAIN RELAXATION   Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  STRAIN RELAXATION