中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [12]
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Tunable Alloying Improved Wide Spectrum UV-Vis-NIR and Polarization-Sensitive Photodetector Based on Sb–S–Se Nanowires 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 卷号: 68, 期号: 8, 页码: 3887-3893
作者:  
Yu, Yali;   Xiong, Tao;   Zhao, Kai;   Zhou, Ziqi;   Ren, Zhihui;   Yang, Juehan;   Liu, Yue-Yang;   Wei, Zhongming
  |  收藏  |  浏览/下载:12/0  |  提交时间:2022/05/19
High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity 期刊论文  OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 22, 页码: 26187-26195
作者:  
Wang, Xinzhe;   Pan, Dong;   Sun, Mei;   Lyu, Fengjiao;   Zhao, Jianhua;   Chen, Qing
  |  收藏  |  浏览/下载:6/0  |  提交时间:2022/07/26
Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO 3 atomic crystals 期刊论文  OAI收割
2D Materials, 2018, 卷号: 5, 期号: 3, 页码: 035033
作者:  
Mianzeng Zhong;  Ke Zhou;  Zhongming Wei;  Yan Li;  Tao Li;  Huanli Dong;  Lang Jiang;  Jingbo Li;  Wenping Hu
  |  收藏  |  浏览/下载:27/0  |  提交时间:2019/11/18
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 11, 页码: 113514, 113514
作者:  
Shang XJ;  He JF;  Li MF;  Zhan F;  Ni HQ
  |  收藏  |  浏览/下载:16/0  |  提交时间:2012/01/06
Effects of the electrical signals generated in passive sections of SG-DBR lasers 期刊论文  OAI收割
optics communications, 2010, 卷号: 283, 期号: 24, 页码: 5156-5160
作者:  
Wang LX
收藏  |  浏览/下载:54/8  |  提交时间:2011/07/05
Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds 期刊论文  iSwitch采集
Ieee journal of quantum electronics, 2009, 卷号: 45, 期号: 5-6, 页码: 575-578
作者:  
Nie, Chao;  Jiang, Ruo Lian;  Ji, Xiao Li;  Xie, Zi Li;  Liu, Bin
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs 期刊论文  OAI收割
ieee journal of quantum electronics, 2009, 卷号: 45, 期号: 5-6, 页码: 575-578
作者:  
Ji XL
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/08
Investigation of responsivity decreasing with rising bias voltage in a gan schottky barrier photodetector 期刊论文  iSwitch采集
Semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: 6
作者:  
Zhang, Shuang;  Zhao, D. G.;  Jiang, D. S.;  Liu, W. B.;  Duan, L. H.
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector 期刊论文  OAI收割
semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: art. no. 105015
Zhang, S; Zhao, DG; Jiang, DS; Liu, WB; Duan, LH; Wang, YT; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H
收藏  |  浏览/下载:63/0  |  提交时间:2010/03/08
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文  OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.)
收藏  |  浏览/下载:102/26  |  提交时间:2010/03/29