机构

• 半导体研究所 [23]

采集方式

• OAI收割 [23]

内容类型

• 期刊论文 [22]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2010 [3]
• 2009 [4]
• 2008 [2]
• 2007 [2]
• 2006 [2]
• 更多

学科主题

• 光电子学 [23]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507 Yu X; Gu YX; Wang Q; Wei X; Chen LH 收藏  |  浏览/下载：64/4  |  提交时间：2011/07/06 type-II 'W' quantum well  Burt-Foreman Hamiltonian  finite element methods  LASERS  ALLOYS   The optimization of large gap-midgap ratio photonic crystal with improved Bisection-Particle Swarm Optimization 期刊论文  OAI收割 optics communications, 2011, 卷号: 284, 期号: 1, 页码: 226-230 作者:  Jiang B 收藏  |  浏览/下载：49/3  |  提交时间：2011/07/06 Particle Swarm Optimization  Bisection-Particle Swarm Optimization  Gap-midgap ratio  BAND-GAP  EMISSION  DEFECT   Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141 作者:  Zhang SM 收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05 BAND-GAP  INDIUM NITRIDE  TRANSPORT  EMISSION   Design of novel polarization beam splitter in two-dimensional photonic crystal 期刊论文  OAI收割 acta physica sinica, 2010, 卷号: 59, 期号: 8, 页码: 5547-5552 Guo H (Guo Hao); Wu P (Wu Ping); Yu TB (Yu Tian-Bao); Liao QH (Liao Qing-Hua); Liu NH (Liu Nian-Hua); Huang YZ (Huang Yong-Zhen) 收藏  |  浏览/下载：59/1  |  提交时间：2010/09/07 polarization beam splitter  band structure  plane wave expansion  finite difference time domain   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410 作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ 收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  QUANTUM DOTS  BAND-GAP  GROWTH  SURFACES   Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109 作者:  Li JB 收藏  |  浏览/下载：112/0  |  提交时间：2010/03/08 ab initio calculations  band structure  cadmium compounds  III-V semiconductors  II-VI semiconductors  IV-VI semiconductors  zinc compounds   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004 作者:  Wang H;  Yang H;  Yang H;  Zhao DG;  Wang YT 收藏  |  浏览/下载：47/1  |  提交时间：2010/03/08 ELECTRON-TRANSPORT  PHASE EPITAXY  NITRIDE INN  BAND-GAP   Investigation on the structural origin of n-type conductivity in InN films 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403 Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  GAN FILMS  DISLOCATION SCATTERING  LAYER THICKNESS  INDIUM NITRIDE  BAND-GAP  VACANCIES