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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [131]
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OAI收割 [131]
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期刊论文 [122]
会议论文 [9]
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2011 [5]
2010 [5]
2009 [14]
2008 [7]
2007 [2]
2006 [9]
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学科主题
半导体物理 [131]
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SGO: A fast engine for ab initio atomic structure global optimization by differential evolution
期刊论文
OAI收割
Computer Physics Communications, 2017, 卷号: 219, 页码: 35–44
作者:
Zhanghui Chen
;
Weile Jia
;
Xiangwei Jiang
;
Shu-Shen Li
;
Lin-Wang Wang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2018/06/15
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313
作者:
Zhang XW
;
Li JB
;
Chang K
;
Li SS
;
Xia JB
  |  
收藏
  |  
浏览/下载:61/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
QUANTUM WIRES
SEMICONDUCTORS
FERROMAGNETISM
FIELD
GAMNN
Molecular-beam Epitaxy
Room-temperature
Quantum Wires
Semiconductors
Ferromagnetism
Field
Gamnn
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
期刊论文
OAI收割
solid state communications, SOLID STATE COMMUNICATIONS, 2011, 2011, 卷号: 151, 151, 期号: 6, 页码: 456-459, 456-459
作者:
Wu H
;
Gan HD
;
Zheng HZ
;
Lu J
;
Zhu H
  |  
收藏
  |  
浏览/下载:62/5
  |  
提交时间:2011/07/05
Magnetic semiconductors
Molecular beam epitaxy
Magneto-optical effects
TRANSPORT-PROPERTIES
SEMICONDUCTOR
(GA,CR)AS
Magnetic Semiconductors
Molecular Beam Epitaxy
Magneto-optical Effects
Transport-properties
Semiconductor
(Ga
Cr)As
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 1, 页码: article no.18102, Article no.18102
作者:
He JF
;
Niu ZC
;
Chang XY
;
Ni HQ
;
Zhu Y
  |  
收藏
  |  
浏览/下载:105/7
  |  
提交时间:2011/07/05
molecular beam epitaxy
anti-phase domain
GaAs/Ge interface
CHEMICAL VAPOR-DEPOSITION
JUNCTION SOLAR-CELLS
DOMAIN-FREE GROWTH
TEMPERATURE
QUALITY
FUTURE
Molecular Beam Epitaxy
Anti-phase Domain
Gaas/ge Interface
Chemical Vapor-deposition
Junction Solar-cells
Domain-free Growth
Temperature
Quality
Future
Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
OAI收割
journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391
作者:
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Raman Spectroscopy
Ultrathin Fe(3)o(4) Film
Crystal Orientation
Strain
Phonon Strain-shift Coefficient
Pulsed-laser Deposition
Thin-films
Spin-transport
Magnetite
Semiconductors
Spintronics
Scattering
Corrosion
Devices
Growth
Resonant subband Landau level coupling in symmetric quantum well
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 8, 页码: art. no. 083502, Art. No. 083502
作者:
Tung LC (Tung L. -C.)
;
Wu XG (Wu X. -G.)
;
Pfeiffer LN (Pfeiffer L. N.)
;
West KW (West K. W.)
;
Wang YJ (Wang Y. -J.)
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/12/05
TILTED MAGNETIC-FIELDS
Tilted Magnetic-fields
Electron-gas
Depolarization Shift
Cyclotron-resonance
Matrix-elements
Heterojunctions
Spectroscopy
Technology
Absorption
Systems
ELECTRON-GAS
DEPOLARIZATION SHIFT
CYCLOTRON-RESONANCE
MATRIX-ELEMENTS
HETEROJUNCTIONS
SPECTROSCOPY
TECHNOLOGY
ABSORPTION
SYSTEMS
First-principles study of UC2 and U2C3
期刊论文
OAI收割
journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 396, 396, 期号: 2-3, 页码: 218-222, 218-222
作者:
Shi HL (Shi Hongliang)
;
Zhang P (Zhang Ping)
;
Li SS (Li Shu-Shen)
;
Wang BT (Wang Baotian)
;
Sun B (Sun Bo)
  |  
收藏
  |  
浏览/下载:78/12
  |  
提交时间:2010/04/21
First-principle calculation
First-principle Calculation
Gga Plus u
Elastic Constants
Chemical Bonding
Valence State
Brillouin-zone Integrations
Carbides
Spectra
Metals
GGA plus U
Elastic constants
Chemical bonding
Valence state
BRILLOUIN-ZONE INTEGRATIONS
CARBIDES
SPECTRA
METALS
Optical properties of UO2 and PuO2
期刊论文
OAI收割
journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 400, 400, 期号: 2, 页码: 151-156, 151-156
作者:
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
  |  
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/06/18
ELECTRONIC-STRUCTURE
Electronic-structure
Uranium-dioxide
Point-defects
Photoemission
Energy
Approximation
Energetics
Plutonium
Crystal
Spectra
URANIUM-DIOXIDE
POINT-DEFECTS
PHOTOEMISSION
ENERGY
APPROXIMATION
ENERGETICS
PLUTONIUM
CRYSTAL
SPECTRA
Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector
期刊论文
OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 2010, 卷号: 53, 53, 期号: 4, 页码: 649-653, 649-653
作者:
Wu H (Wu Hao)
;
Zheng HZ (Zheng HouZhi)
;
Liu J (Liu Jian)
;
Li GR (Li GuiRong)
;
Xu P (Xu Ping)
  |  
收藏
  |  
浏览/下载:81/2
  |  
提交时间:2010/05/04
spintronics
Spintronics
Spin Injection
Light Emitting Diode
Multiple Quantum Well
Semiconductor Spintronics
spin injection
light emitting diode
multiple quantum well
SEMICONDUCTOR SPINTRONICS