机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [10]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2010 [3]
• 2008 [2]
• 2006 [1]
• 2005 [2]
• 2004 [2]
• 更多

学科主题

• 光电子学 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013 Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM 收藏  |  浏览/下载：60/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MIRRORS  GAN  WAVELENGTHS   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：126/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文  OAI收割 solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7 Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H 收藏  |  浏览/下载：71/0  |  提交时间：2010/04/04 FABRICATION  SILICON  MEMS  NITRIDE   Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103 Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May) 收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22 VAPOR-PHASE EPITAXY  TEMPERATURE ALN INTERLAYERS  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  REDUCTION  THICKNESS  NITRIDE  LAYERS   High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101 Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29 LIGHT-EMITTING-DIODES   The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 280, 期号: 3-4, 页码: 346-351 Zhang NH; Wang XL; Zeng YP; Xiao HL; Wang JX; Liu HX; Li JM 收藏  |  浏览/下载：41/12  |  提交时间：2010/03/17 photoluminescence   Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文  OAI收割 applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: art.no.121914 作者:  Yang H;  Yang H;  Wang H;  Jiang DS;  Zhang SM 收藏  |  浏览/下载：106/19  |  提交时间：2010/03/17 CHEMICAL-VAPOR-DEPOSITION   Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321 作者:  Zhao DG 收藏  |  浏览/下载：192/51  |  提交时间：2010/03/09 X-ray diffraction