机构

• 半导体研究所 [182]

采集方式

• OAI收割 [182]

内容类型

• 期刊论文 [152]
• 会议论文 [30]

发表日期

• 2017 [7]
• 2016 [8]
• 2015 [6]
• 2014 [6]
• 2013 [9]
• 2012 [8]
• 更多

学科主题

• 光电子学 [182]

筛选

浏览/检索结果: 共182条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文  OAI收割 Scientific Reports, 2017, 卷号: 7, 页码: 44850 作者:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu   |  收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30 Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文  OAI收割 OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602 作者:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG   |  收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30 Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文  OAI收割 IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108 作者:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/11/30 High Coupling Efficiency of the Fiber-Coupled Module Based on Photonic-Band-Crystal Laser Diodes 期刊论文  OAI收割 CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 074205 作者:  Yang Chen;  Yu-Fei Wang;  Hong-Wei Qu;  Yu-Fang Zhang;  Yun Liu 收藏  |  浏览/下载：35/0  |  提交时间：2018/07/02 Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文  OAI收割 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang 收藏  |  浏览/下载：39/0  |  提交时间：2018/07/11 Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文  OAI收割 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN 收藏  |  浏览/下载：20/0  |  提交时间：2018/07/11 Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割 AIP Advances, 2017, 卷号: 7, 页码: 035103 作者:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li 收藏  |  浏览/下载：25/0  |  提交时间：2018/07/11 Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文  OAI收割 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载：29/0  |  提交时间：2017/03/10 The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文  OAI收割 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 4, 页码: 041211 Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10