中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
机构
采集方式
内容类型
发表日期
学科主题
  • 半导体物理 [148]
筛选

浏览/检索结果: 共148条，第1-10条 帮助

限定条件    
条数/页： 排序方式：
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文  OAI收割
journal of crystal growth, 2016, 卷号: 443, 页码: 85-89
Wei Xiang; Guowei Wang; Hongyue Hao; Yongping Liao; Xi Han; Lichun Zhang; Yingqiang Xu; Zhengwei Ren; Haiqiao Ni; Zhenhong He; Zhichuan Niu
收藏  |  浏览/下载：35/0  |  提交时间：2017/03/16
Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文  OAI收割
chinese physics letters, CHINESE PHYSICS LETTERS, 2014, 2014, 卷号: 31, 31, 期号: 5, 页码: 054204, 054204
作者:  Xing, JL;  Zhang, Y;  Liao, YP;  Wang, J;  Xiang, W
  |  收藏  |  浏览/下载：21/0  |  提交时间：2015/04/02
Optimization of InAs/GaAs quantum-dot structures and application to 1.3-mu m mode-locked laser diodes 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 2, 页码: 027803, 027803
作者:  Li, MF;  Ni, HQ;  Ding, Y;  David, B;  Kong, L
  |  收藏  |  浏览/下载：21/0  |  提交时间：2015/05/11
Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres 期刊论文  OAI收割
japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 51, 51, 期号: 2，part 1, 页码: 20204, 20204
作者:  Zhang, YY;  Li, J;  Wei, TB;  Liu, J;  Yi, XY
  |  收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17
Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts 期刊论文  OAI收割
journal of colloid and interface science, JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2011, 2011, 卷号: 358, 358, 期号: 2, 页码: 334-337, 334-337
作者:  Meng XQ;  Liu CR;  Wu FM;  Li JB;  Li, JB, Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China. jbli@semi.ac.cn
  |  收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability 期刊论文  OAI收割
journal of the american chemical society, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 2011, 卷号: 133, 133, 期号: 15, 页码: 5941-5946, 5941-5946
作者:  Zhao WJ;  Tan PH;  Liu J;  Ferrari AC;  Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
  |  收藏  |  浏览/下载：90/4  |  提交时间：2011/07/05
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y
  |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06
Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 12, 页码: 123504, 123504
作者:  Lv YJ;  Lin ZJ;  Meng LG;  Yu YX;  Luan CB
  |  收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文  OAI收割
ieee transactions on nanotechnology, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 2011, 卷号: 10, 10, 期号: 1, 页码: 53-58, 53-58
作者:  Lu XF;  Balocco C;  Yang FH;  Song AM;  Lu, XF, Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, Englandxiaofeng.lu@manchester.ac.uk
  |  收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05
Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires 期刊论文  OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 2011, 卷号: 115, 115, 期号: 15, 页码: 7225-7229, 7225-7229
作者:  Meng XQ;  Wu FM;  Li JB;  Li, JB, Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China. jbli@semi.ac.cn
  |  收藏  |  浏览/下载：37/2  |  提交时间：2011/07/05