机构

• 半导体研究所 [42]

采集方式

• OAI收割 [42]

内容类型

• 期刊论文 [38]
• 会议论文 [4]

发表日期

• 2011 [2]
• 2009 [4]
• 2008 [2]
• 2007 [2]
• 2006 [3]
• 2004 [2]
• 更多

学科主题

• 半导体物理 [42]

筛选

浏览/检索结果: 共42条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 optoelectronics letters, Optoelectronics Letters, 2011, 2011, 卷号: 7, 7, 期号: 5, 页码: 325-329, 325-329 作者:  Zhu, Yan;  Ni, Hai-qiao;  Wang, Hai-li;  He, Ji-fang;  Li, Mi-feng   |  收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells  Epitaxial Growth  Gallium Arsenide  Growth(Materials)  Molecular Beam Epitaxy  Semiconducting Gallium  Semiconducting Indium  Semiconductor Quantum Wells   GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  MOLECULAR-BEAM-EPITAXY  FILMS  MISFIT   EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR 期刊论文  OAI收割 modern physics letters b, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887 Zhang B; Chen J; Wang X; Wu AM; Luo JX; Wang X; Zhang MA; Wu YX; Zhu JJ; Yang H 收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08 GaN  epitaxial lateral overgrowth   The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文  OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui) 收藏  |  浏览/下载：129/35  |  提交时间：2010/03/08 GaN   Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H 收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08 edge dislocations  gallium compounds  III-V semiconductors  impurities  photoluminescence  semiconductor doping  semiconductor thin films  silicon  wide band gap semiconductors  X-ray diffraction   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   Comment on 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 15, 页码: art. no. 156102 Zhou ZW; Li C; Chen SY; Lai HK; Yu JZ 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/08 THERMAL-EXPANSION   Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction 期刊论文  OAI收割 physica scripta, 2007, 卷号: t129, 页码: 27-30 Qiu, YX; Li, MC; Wang, YT; Zhang, BS; Wang, Y; Liu, GJ; Zhao, LC 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/08 FILMS   Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 971-974 Tangring, I (Tangring, I.); Wang, SM (Wang, S. M.); Sadeghi, M (Sadeghi, M.); Larsson, A (Larsson, A.); Wang, XD (Wang, X. D.) 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/29 metamorphic growth