机构

• 半导体研究所 [49]

采集方式

• OAI收割 [49]

内容类型

• 期刊论文 [42]
• 会议论文 [7]

发表日期

• 2016 [1]
• 2011 [4]
• 2010 [2]
• 2009 [4]
• 2008 [4]
• 2007 [3]
• 更多

学科主题

• 半导体材料 [49]

筛选

浏览/检索结果: 共49条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Tunable electronic structure of black phosphorus/blue phosphorus van der Waals p-n heterostructure 期刊论文  OAI收割 applied physics letters, 2016, 卷号: 108, 期号: 8, 页码: 083101 Le Huang; Jingbo Li 收藏  |  浏览/下载：10/0  |  提交时间：2017/03/10 Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文  OAI收割 journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801 Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：17/0  |  提交时间：2010/12/28 NARROW-GAP SEMICONDUCTOR  INVERSION-ASYMMETRY  QUANTUM DOTS  BAND  STATES   Characteristics of charge density waves on the surfaces of quasi-one-dimensional charge-transfer complex layered organic crystals 期刊论文  OAI收割 physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.125434 Lin F; Huang XM; Qu SC; Fang ZY; Huang S; Song WT; Zhu X; Liu ZF 收藏  |  浏览/下载：50/5  |  提交时间：2011/07/05 SCANNING-TUNNELING-MICROSCOPY  MOLECULAR CONDUCTORS  PHASE-TRANSITION  TETRACYANOQUINODIMETHANE  (EDO-TTF)(2)PF6  DERIVATIVES  TTF   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：17/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402 作者:   收藏  |  浏览/下载：43/6  |  提交时间：2011/07/05 InGaN  solar cell  multiple quantum wells  IN1-XGAXN ALLOYS  BAND-GAP  INN   Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117104 Hao GD (Hao Guo-Dong); Chen YH (Chen Yong-Hai); Fan YM (Fan Ya-Ming); Huang XH (Huang Xiao-Hui); Wang HB (Wang Huai-Bing) 收藏  |  浏览/下载：12/0  |  提交时间：2010/12/28 LIGHT-EMITTING-DIODES  WURTZITE SEMICONDUCTORS  QUANTUM-WELLS  MATRIX-ELEMENTS  SEMIPOLAR  SAPPHIRE   Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文  OAI收割 solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710 Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Wang YS (Wang Y. S.); Zhang H (Zhang H.) 收藏  |  浏览/下载：190/22  |  提交时间：2010/09/07 Thermophotovoltaic  Gallium antimonide  Absorption coefficient   Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801 作者:  Yang JK;  Wei TB;  Duan RF 收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  DISLOCATIONS  SUBSTRATE  LAYER   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure 期刊论文  OAI收割 physics letters a, 2009, 卷号: 373, 期号: 22, 页码: 1983-1987 作者:  Zhang XW;  Wang Y;  Yin ZG 收藏  |  浏览/下载：124/57  |  提交时间：2010/03/08 Magnetic-electric barrier  Ballistic transport  Magnetoresistance