机构

• 半导体研究所 [23]

采集方式

• OAI收割 [23]

内容类型

• 期刊论文 [22]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2013 [4]
• 2012 [2]
• 2011 [2]
• 2010 [1]
• 2005 [5]
• 更多

学科主题

• 半导体材料 [23]

筛选

浏览/检索结果: 共23条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures 期刊论文  OAI收割 semiconductor science and technology, 2014, 卷号: 29, 期号: 4, 页码: 045015 Feng, YX; Liu, GP; Yang, SY; Wei, HY; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：12/0  |  提交时间：2015/04/02 Dielectric and barrier thickness fluctuation scattering in Al2O3AlGaNGaN double 期刊论文  OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Jia, Yanwu Lu , Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：19/0  |  提交时间：2014/03/18 Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109 Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo 收藏  |  浏览/下载：26/0  |  提交时间：2014/03/17 Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文  OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：17/0  |  提交时间：2014/05/08 Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文  OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655-658 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：23/0  |  提交时间：2013/08/27 Spacer layer thickness fluctuation scattering in a modulation-doped Al xGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 10, 页码: 107305 Gu, Cheng-Yan; Liu, Gui-Peng; Shi, Kai; Song, Ya-Feng; Li, Cheng-Ming; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang, Zhan-Guo 收藏  |  浏览/下载：22/0  |  提交时间：2013/04/19 Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 10, 页码: 107305 Gu CY (Gu Cheng-Yan); Liu GP (Liu Gui-Peng); Shi K (Shi Kai); Song YF (Song Ya-Feng); Li CM (Li Cheng-Ming); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26 Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705 Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06 FIELD-EFFECT TRANSISTORS  INTERFACE ROUGHNESS  QUANTUM-WELLS  MOBILITY  HETEROJUNCTION  TRANSPORT  MODEL   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 314, 314, 期号: 1, 页码: 141-145, 141-145 作者:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ   |  收藏  |  浏览/下载：79/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE  Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride   Surface roughness scattering in two dimensional electron gas channel 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  MOBILITY ALGAN/GAN HETEROSTRUCTURES  RAY PHOTOEMISSION SPECTROSCOPY  PERFORMANCE  ALN  MODFETS  INN