机构

• 半导体研究所 [20]

采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [19]
• 会议论文 [1]

发表日期

• 2011 [3]
• 2010 [4]
• 2009 [1]
• 2008 [3]
• 2007 [1]
• 2006 [3]
• 更多

学科主题

• 半导体物理 [20]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn 期刊论文  OAI收割 journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148 作者:  Yang GD;  Zhu F;  Dong S;  Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com   |  收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 Diffusion  Physical vapor deposition processes  Magnetic materials  Semiconducting III-V materials  GASB/MN DIGITAL ALLOYS  ROOM-TEMPERATURE FERROMAGNETISM  RAMAN-SCATTERING  MAGNETOTRANSPORT PROPERTIES  EPITAXIAL LAYERS  THIN-FILMS  SEMICONDUCTORS  STRAIN  MAGNETOELECTRONICS  SPINTRONICS  Diffusion  Physical Vapor Deposition Processes  Magnetic Materials  Semiconducting Iii-v Materials  Gasb/mn Digital Alloys  Room-temperature Ferromagnetism  Raman-scattering  Magnetotransport Properties  Epitaxial Layers  Thin-films  Semiconductors  Strain  Magnetoelectronics  Spintronics   Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain 期刊论文  OAI收割 journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391 作者:  Zhang, J;  Tan, PH;  Zhao, WJ;  Lu, J;  Zhao, JH   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06 Raman spectroscopy  ultrathin Fe(3)O(4) film  crystal orientation  strain  phonon strain-shift coefficient  PULSED-LASER DEPOSITION  THIN-FILMS  SPIN-TRANSPORT  MAGNETITE  SEMICONDUCTORS  SPINTRONICS  SCATTERING  CORROSION  DEVICES  GROWTH  Raman Spectroscopy  Ultrathin Fe(3)o(4) Film  Crystal Orientation  Strain  Phonon Strain-shift Coefficient  Pulsed-laser Deposition  Thin-films  Spin-transport  Magnetite  Semiconductors  Spintronics  Scattering  Corrosion  Devices  Growth   Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301 作者:  Wang, LG;  Shen, C;  Zheng, HZ;  Zhu, H;  Zhao, JH   |  收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 charged acceptor centre  screening effect  exchange interaction  SHALLOW ACCEPTOR STATES  GALLIUM-ARSENIDE  SEMICONDUCTORS  FIELD  Charged Acceptor Centre  Screening Effect  Exchange Interaction  Shallow Acceptor States  Gallium-arsenide  Semiconductors  Field   Resonant subband Landau level coupling in symmetric quantum well 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 8, 页码: art. no. 083502, Art. No. 083502 作者:  Tung LC (Tung L. -C.);  Wu XG (Wu X. -G.);  Pfeiffer LN (Pfeiffer L. N.);  West KW (West K. W.);  Wang YJ (Wang Y. -J.)   |  收藏  |  浏览/下载：29/0  |  提交时间：2010/12/05 TILTED MAGNETIC-FIELDS  Tilted Magnetic-fields  Electron-gas  Depolarization Shift  Cyclotron-resonance  Matrix-elements  Heterojunctions  Spectroscopy  Technology  Absorption  Systems  ELECTRON-GAS  DEPOLARIZATION SHIFT  CYCLOTRON-RESONANCE  MATRIX-ELEMENTS  HETEROJUNCTIONS  SPECTROSCOPY  TECHNOLOGY  ABSORPTION  SYSTEMS   Ferromagnetic properties in Fe-doped ZnS thin films 期刊论文  OAI收割 optoelectronics and advanced materials-rapid communications, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 2010, 卷号: 4, 4, 期号: 12, 页码: 2072-2075, 2072-2075 作者:  Zhu F;  Dong S;  Yang GD;  Zhu, F, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhufeng@semi.ac.cn   |  收藏  |  浏览/下载：38/1  |  提交时间：2011/07/06 Fe-doped ZnS  First principles calculation  Ferromagnetic properties  High Curie temperature  OPTICAL-PROPERTIES  SEMICONDUCTORS  Fe-doped Zns  First Principles Calculation  Ferromagnetic Properties  High Curie Temperature  Optical-properties  Semiconductors   Electron spin dynamics in heavily Mn-doped (Ga,Mn)As 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2010, 2010, 卷号: 97, 97, 期号: 26, 页码: article no.262109, Article no.262109 作者:  Zhu YG;  Han LF;  Chen L;  Zhang XH;  Zhao JH   |  收藏  |  浏览/下载：63/6  |  提交时间：2011/07/05 SEMICONDUCTORS  TEMPERATURE  GAAS  Semiconductors  Temperature  Gaas   Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 2010, 卷号: 42, 42, 期号: 5, 页码: 1597-1600, 1597-1600 作者:  Li T;  Zhang XH;  Zhu YG;  Huang X;  Han LF   |  收藏  |  浏览/下载：80/0  |  提交时间：2010/04/28 Ultrathin InAs monolayer  Ultrathin Inas Monolayer  Hole Spin Relaxation  Dp Mechanism  Semiconductor Quantum Dots  Wells  Gaas  Hole spin relaxation  DP mechanism  SEMICONDUCTOR QUANTUM DOTS  WELLS  GAAS   Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 142109 作者:  Zhang XH;  Chen L 收藏  |  浏览/下载：108/22  |  提交时间：2010/03/08 Curie temperature  ferromagnetic materials  gallium compounds  Kerr magneto-optical effect  magnetic relaxation  magnetic thin films  manganese compounds  semimagnetic semiconductors  spin dynamics  time resolved spectra   Analytical model of spin filtering effect and its experimental verification in a forward-biased iron-metal-Al2O3-n-type GaAs tunneling structure under optical spin orientation 期刊论文  OAI收割 epl, 2008, 卷号: 82, 期号: 3, 页码: art. no. 37003 Xiao, WB; Zheng, HZ; Liu, J; Li, GR; Zhao, JH 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/08 INJECTION  TRANSPORT  BARRIER   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)