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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [49]
采集方式
OAI收割 [49]
内容类型
期刊论文 [42]
会议论文 [7]
发表日期
2009 [4]
2008 [4]
2007 [1]
2006 [8]
2005 [2]
2003 [6]
更多
学科主题
半导体物理 [49]
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Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 014214
Wang HL
;
Wu DH
;
Wu BP
;
Ni HQ
;
Huang SS
;
Xiong YH
;
Wang PF
;
Han Q
;
Niu ZC
;
Tangring I
;
Wang SM
收藏
  |  
浏览/下载:176/53
  |  
提交时间:2010/03/08
THRESHOLD CURRENT-DENSITY
Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:
Hao GD
收藏
  |  
浏览/下载:129/28
  |  
提交时间:2010/03/08
CONTINUOUS-WAVE OPERATION
QUANTUM-WELLS
LASER-DIODES
ORIENTATION
SEMICONDUCTORS
DEPENDENCE
ANISOTROPY
SEMIPOLAR
SAPPHIRE
FILMS
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:
Jiang DS
;
Zhang SM
;
Yang H
;
Yang H
;
Wang YT
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/03/08
LIGHT-EMITTING-DIODES
FUNDAMENTAL-BAND GAP
NANOWIRES
HETEROSTRUCTURES
NANOSTRUCTURES
MOCVD
POLAR
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
期刊论文
OAI收割
chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Zhang, Y
;
Han, CL
;
Gao, JF
;
Zhu, ZP
;
Wang, BQ
;
Zeng, YP
收藏
  |  
浏览/下载:55/6
  |  
提交时间:2010/03/08
resonant tunnelling diode
molecular beam epitaxy
Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths
期刊论文
OAI收割
chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647
作者:
Zhang Y
;
Zhang Y
收藏
  |  
浏览/下载:266/32
  |  
提交时间:2010/03/08
resonant tunnelling diode
molecular beam epitaxy
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
作者:
Ji L
;
Jiang DS
;
Zhao DG
;
Zhang SM
;
Yang H
收藏
  |  
浏览/下载:60/5
  |  
提交时间:2010/03/08
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
OAI收割
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
A bidirectionall diode-pumped, passively mode-locked Nd : YVO4 ring laser with a low-temperature-grown semiconductor saturable absorber mirror
期刊论文
OAI收割
chinese physics letters, 2007, 卷号: 24, 期号: 5, 页码: 1270-1272
Cai ZQ (Cai Zhi-Qiang)
;
Yao JQ (Yao Jian-Quan)
;
Wang P (Wang Peng)
;
Wang YG (Wang Yong-Gang)
;
Zhang ZG (Zhang Zhi-Gang)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/29
AVERAGE POWER
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH
;
Niu ZC
;
Zhang SY
;
Ni HQ
;
He ZH
;
Sun Z
;
Han Q
;
Wu RH
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2010/04/11
photoluminescence
molecular beam epitaxy
quantum wells
nitrides
semiconducting III-V materials
IMPROVED LUMINESCENCE EFFICIENCY
LASER-DIODES
TEMPERATURE
SURFACTANT
EMISSION
NITROGEN
ORIGIN