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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [14]
采集方式
OAI收割 [14]
内容类型
期刊论文 [14]
发表日期
2011 [1]
2009 [1]
2007 [3]
2005 [1]
2004 [1]
2002 [2]
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学科主题
半导体物理 [14]
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Origin of the low thermal conductivity of the thermoelectric material beta-Zn(4)Sb(3): An ab initio theoretical study
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 24, 页码: 241901, 241901
作者:
Chen, WB
;
Li, JB
;
Chen, WB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/01/06
PHONON-GLASS
INTERSTITIAL ZN
ZN4SB3
ENERGY
ZINC
Phonon-glass
Interstitial Zn
Zn4sb3
Energy
Zinc
The bipolar doping of ZnS via native defects and external dopants
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
收藏
  |  
浏览/下载:131/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT
The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
期刊论文
OAI收割
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 3, 页码: 765-768
Wang BZ
;
Wang XL
;
Wang XY
;
Guo LC
;
Wang XH
;
Xiao HL
;
Liu HX
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/29
LIGHT-EMITTING-DIODES
Influences of As flux on the lattice constants, magnetic and transport properties of (Ga, Mn)As epilayers
期刊论文
OAI收割
solid state communications, 2007, 卷号: 141, 期号: 8, 页码: 453-458
作者:
Gan HD
;
Tan PH
;
Zhu H
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/29
magnetic semiconductors
A proposal for low cross-talk square-lattice photonic crystal waveguide intersection utilizing the symmetry of waveguide modes
期刊论文
OAI收割
optics communications, 2007, 卷号: 273, 期号: 1, 页码: 89-93
Li ZF (Li Zhaofeng)
;
Chen HB (Chen Haibo)
;
Chen JJ (Chen Jianjun)
;
Yang FH (Yang Fuhua)
;
Zheng HZ (Zheng Houzhi)
;
Feng SL (Feng Songlin)
收藏
  |  
浏览/下载:172/0
  |  
提交时间:2010/03/29
CIRCUITS
Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
期刊论文
OAI收割
high energy physics and nuclear physics-chinese edition, 2005, 卷号: 29, 期号: suppl.s, 页码: 37-39
Chen J
;
Wang JF
;
Zhang JC
;
Wang H
;
Huang Y
;
Wang YT
;
Yang H
;
Jia QJ
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
GaN
metalorganic chemical vapor deposition (MOCVD)
epitaxy lateral overgrowth
stacking faults
synchrotron radiation X-ray diffraction (XRD)
pole figure
WURTZITE GAN
LUMINESCENCE
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy
期刊论文
OAI收割
applied physics letters, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
作者:
Jiang DS
收藏
  |  
浏览/下载:83/29
  |  
提交时间:2010/03/09
1.3 MU-M
Content analyses in GaMnAs by double-crystal X-ray diffraction
期刊论文
OAI收割
chinese science bulletin, 2002, 卷号: 47, 期号: 4, 页码: 274-275
Chen NF
;
Xiu HX
;
Yang JL
;
Wu JL
;
Zhong XR
;
Lin LY
收藏
  |  
浏览/下载:96/12
  |  
提交时间:2010/08/12
GaMnAs
diluted magnetic semiconductor
X-ray diffraction
lattice parameter
content of Mn
SEMICONDUCTOR
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
期刊论文
OAI收割
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF
;
Cao YG
;
Xie MH
;
Wang XL
;
Tong SY
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
MISFIT DISLOCATIONS
DEFECTS
INGAN
GAN
REDUCTION
INDIUM
LAYERS
FILMS
Effect of defects on optical phonon Raman spectra in SiC nanorods
期刊论文
OAI收割
solid state communications, 1999, 卷号: 111, 期号: 11, 页码: 647-651
Zhang SL
;
Zhu BF
;
Huang FM
;
Yan Y
;
Shang EY
;
Fan SS
;
Han WG
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/08/12
nanostructures
phonons
inelastic light scattering
SCATTERING
SILICON
FABRICATION
FILMS
MODES
QUANTUM-WELL WIRES