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Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width 期刊论文  OAI收割
NANO LETTERS, 2021, 卷号: 21, 期号: 13, 页码: 5555-5563
作者:  Kang, Yuye;   Xu, Shengqiang;   Han, Kaizhen;   Kong, Eugene Y-J;   Song, Zhigang;   Luo, Sheng;   Kumar, Annie;   Wang, Chengkuan;   Fan, Weijun;   Liang, Gengchiau;   Gong, Xiao
  |  收藏  |  浏览/下载：19/0  |  提交时间：2022/05/19
Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal-Oxide-Semiconductor Structure 期刊论文  OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 卷号: 68, 期号: 6, 页码: 2879-2885
作者:  Guo, Zhiyu;   Wu, Jingmin;   Tian, Run;   Wang, Fengxuan;   Xu, Pengfei;   Yang, Xiang;   Fan, Zhongchao;   Yang, Fuhua;   He, Zhi
  |  收藏  |  浏览/下载：23/0  |  提交时间：2022/05/19
Construction of a β-Ga2O3-based metal–oxide–semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications† 期刊论文  OAI收割
JOURNAL OF MATERIALS CHEMISTRY C, 2020, 卷号: 8, 期号: 15, 页码: 5071-5081
作者:  Zeng Liu;   Shan Li;   Zuyong Yan;   Yuanyuan Liu;   Yusong Zhi;   Xia Wang;   Zhenping Wu;   Peigang Li ;   Weihua Tang
  |  收藏  |  浏览/下载：10/0  |  提交时间：2021/06/28
Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文  OAI收割
international journal of thermophysics, International Journal of Thermophysics, 2015, 2015, 卷号: 36, 36, 页码: 980–986, 980–986
作者:  Yan Liu;  Jing Yan;  Hongjuan Wang;  Buwen Cheng;  Genquan Han
  |  收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文  OAI收割
semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 2014, 卷号: 29, 29, 期号: 11, 页码: 115027, 115027
作者:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan
  |  收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19
Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文  OAI收割
ieee transactions on electron devices, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 2014, 卷号: 61, 61, 期号: 11, 页码: 3639-3645, 3639-3645
作者:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan
  |  收藏  |  浏览/下载：25/0  |  提交时间：2015/03/20
Abnormal variation of optical properties of vanadium oxide thin film at semiconductor-metal transition 期刊论文  OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2014, 2014, 卷号: 63, 63, 期号: 10, 页码: 107104, 107104
作者:  Yang, W;  Liang, JR;  Liu, J;  Ji, Y
  |  收藏  |  浏览/下载：10/0  |  提交时间：2015/04/02
Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires 期刊论文  OAI收割
RSC Advances, 2013, 期号: 43, 页码: 19834-19839
Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
收藏  |  浏览/下载：30/0  |  提交时间：2014/02/12
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文  OAI收割
Solid-State Electronics, Solid-State Electronics, 2013, 2013, 卷号: 83, 83, 页码: 66–70, 66–70
作者:  Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
  |  收藏  |  浏览/下载：28/0  |  提交时间：2014/04/04