中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [22]
采集方式
OAI收割 [22]
内容类型
期刊论文 [19]
会议论文 [3]
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2014 [1]
2013 [1]
2010 [2]
2008 [2]
2007 [1]
2006 [1]
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学科主题
光电子学 [22]
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Growth of Crystalline Ge1-xSnx Films on Si by Magnetron Sputtering
期刊论文
OAI收割
ecs solid state letters, ECS SOLID STATE LETTERS, 2014, 2014, 卷号: 3, 3, 期号: 9, 页码: p111-p113, P111-P113
作者:
Zheng, J
;
Li, LL
;
Zhou, TW
;
Zuo, YH
;
Li, CB
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2015/03/25
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation
期刊论文
OAI收割
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao
;
Han, Genquan
;
Bai, Fan
;
Su, Shaojian
;
Guo, Pengfei
;
Yang, Yue
;
Cheng, Ran
;
Zhang, Dongliang
;
Zhang, Guangze
;
Xue, Chunlai
;
Cheng, Buwen
;
Pan, Jisheng
;
Zhang, Zheng
;
Tok, Eng Soon
;
Antoniadis, Dimitri
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/09/17
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:126/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
期刊论文
OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui)
;
Liang H (Liang Hu)
;
Wang Y (Wang Yong)
;
Ng KW (Ng Kar-Wei)
;
Deng DM (Deng Dong-Mei)
;
Lau KM (Lau Kei-May)
收藏
  |  
浏览/下载:96/3
  |  
提交时间:2010/04/22
VAPOR-PHASE EPITAXY
TEMPERATURE ALN INTERLAYERS
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
REDUCTION
THICKNESS
NITRIDE
LAYERS
High-temperature AlN interlayer for crack-free AlGaN growth on GaN
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q
;
Wang, JT
;
Wang, H
;
Jin, RQ
;
Jiang, DS
;
Zhu, JJ
;
Zhao, DG
;
Yang, H
;
Zhou, SQ
;
Wu, MF
;
Smeets, D
;
Vantomme, A
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
STRESS
SI(111)
REDUCTION
THICKNESS
Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing
期刊论文
OAI收割
chinese optics letters, 2008, 卷号: 6, 期号: 2, 页码: 108-111
Li AK
;
Wang ZM
;
Liu JJ
;
Zeng XY
;
Wang CX
;
Chen HD
收藏
  |  
浏览/下载:83/2
  |  
提交时间:2010/03/08
OPTICAL WAVE-GUIDES
SOL-GEL METHOD
FEMTOSECOND LASER
FILMS
COMPOSITE
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)
期刊论文
OAI收割
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W
;
Zhu JJ
;
Jiang S
;
Yang H
;
Wang JF
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer
期刊论文
OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng)
;
Zhang BS (Zhang Bao-Shun)
;
Zhang JC (Zhang Ji-Cai)
;
Zhu JJ (Zhu Jian-Jun)
;
Wang YT (Wang Yu-Tian)
;
Chen J (Chen Jun)
;
Liu W (Liu Wei)
;
Jiang DS (Jiang De-Sheng)
;
Yao DZ (Yao Duan-Zheng)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
HIGH-QUALITY GAN
ALN BUFFER LAYER
NUCLEATION LAYER
PHASE EPITAXY
EVOLUTION
DENSITY
SILICON
STRESS
SI
Optical properties of GaN grown on Si(111) substrates by MOCVD
期刊论文
OAI收割
international journal of modern physics b, 2005, 卷号: 19, 期号: 15-17, 页码: 2610-2615
Zhang BS
;
Wang JF
;
Wang Y
;
Zhu JJ
;
Yang H
收藏
  |  
浏览/下载:45/13
  |  
提交时间:2010/03/17
GaN
An improvement on Si-etching tetramethyl ammonium hydroxide solution
期刊论文
OAI收割
chinese journal of chemical engineering, 2005, 卷号: 13, 期号: 1, 页码: 48-50
作者:
Li YT
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/03/17
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