中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [22]
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Growth of Crystalline Ge1-xSnx Films on Si by Magnetron Sputtering 期刊论文  OAI收割
ecs solid state letters, ECS SOLID STATE LETTERS, 2014, 2014, 卷号: 3, 3, 期号: 9, 页码: p111-p113, P111-P113
作者:  
Zheng, J;  Li, LL;  Zhou, TW;  Zuo, YH;  Li, CB
  |  收藏  |  浏览/下载:17/0  |  提交时间:2015/03/25
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文  OAI收割
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia
收藏  |  浏览/下载:28/0  |  提交时间:2013/09/17
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载:126/4  |  提交时间:2010/04/13
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文  OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载:96/3  |  提交时间:2010/04/22
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文  OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载:73/0  |  提交时间:2010/03/08
Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing 期刊论文  OAI收割
chinese optics letters, 2008, 卷号: 6, 期号: 2, 页码: 108-111
Li AK; Wang ZM; Liu JJ; Zeng XY; Wang CX; Chen HD
收藏  |  浏览/下载:83/2  |  提交时间:2010/03/08
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文  OAI收割
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载:33/0  |  提交时间:2010/03/29
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文  OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
Optical properties of GaN grown on Si(111) substrates by MOCVD 期刊论文  OAI收割
international journal of modern physics b, 2005, 卷号: 19, 期号: 15-17, 页码: 2610-2615
Zhang BS; Wang JF; Wang Y; Zhu JJ; Yang H
收藏  |  浏览/下载:45/13  |  提交时间:2010/03/17
GaN  
An improvement on Si-etching tetramethyl ammonium hydroxide solution 期刊论文  OAI收割
chinese journal of chemical engineering, 2005, 卷号: 13, 期号: 1, 页码: 48-50
作者:  
Li YT
收藏  |  浏览/下载:21/0  |  提交时间:2010/03/17