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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 卷号: 21, 期号: 5, 页码: 2001-2010 Chen, M; Wang, X; Chen, J; Dong, YM; Yi, WB; Liu, XH; Wang, X 收藏  |  浏览/下载：6/0  |  提交时间：2012/03/24 OXIDATION ITOX PROCESS  BURIED OXIDE LAYERS  SIMOX WAFERS  ION-IMPLANTATION  TEMPERATURE  SEPARATION   Study of phase formation of implantation layers by Al-MePBII into AgMgNi alloy 期刊论文  OAI收割 SURFACE & COATINGS TECHNOLOGY, 2002, 卷号: 158, 页码: 253-257 Yu, WD; Xia, LF; Sun, Y; Wang, X; Liu, XH 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 ION-IMPLANTATION  ARC ION  PLASMA   Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 卷号: 20, 期号: 4, 页码: 1570-1573 Chen, J; Chen, M; Dong, YM; Wang, X; Zheng, ZH; Wang, X 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/24 ION-IMPLANTATION  HIGH-TEMPERATURE  DIFFUSION  HYDROGEN  MECHANISM  OXIDATION  SIMOX  SIO2   Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 卷号: 19, 期号: 2, 页码: 337-343 Chen, M; Chen, J; Zheng, W; Li, L; Mu, HC; Lin, ZX; Yu, YH; Wang, X; Wang, GY 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 ION-IMPLANTATION  LAYER FORMATION  SIMOX  SILICON   Structural and electrical characteristics of oxygen-implanted 6H-SiC 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 卷号: 169, 页码: 1-5 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  SILICON-CARBIDE  ION-IMPLANTATION  AMORPHIZATION  LAYERS   Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 卷号: 147, 期号: 1-4, 页码: 207-211 Zeng, JM; Lin, CL; Zheng, LR; Pignolet, A; Alexe, M; Richter, E; Hesse, D 收藏  |  浏览/下载：8/0  |  提交时间：2012/03/25 ION-IMPLANTATION  PB(ZR  TI)O-3   Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 1, 页码: 94-98 Zhang, MA; Lin, CL; Duo, XZ; Lin, ZX; Zhou, ZY 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/25 ION-IMPLANTATION  SILICON-OXIDES  COPPER  TECHNOLOGY  BREAKDOWN  NICKEL  CARBON   DEPOSITION AND MODIFICATION OF TITANIUM NITRIDE BY ION-ASSISTED ARE DEPOSITION 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 卷号: 13, 期号: 3, 页码: 1658-1664 BENDAVID, A; MARTIN, PJ; WANG, X; WITTLING, M; KINDER, TJ 收藏  |  浏览/下载：10/0  |  提交时间：2012/03/25 FILTERED ARC EVAPORATION  THIN-FILMS  ELASTIC-CONSTANTS  BOMBARDMENT  TIN  COATINGS  GROWTH  STRESS  MICROSTRUCTURE  ORIENTATION   MEV IMPLANTATION INTO SEMICONDUCTORS 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 卷号: Jan-80, 页码: 507-513 WILLIAMS, JS; ELLIMAN, RG; RIDGWAY, MC; JAGADISH, C; ELLINGBOE, SL; GOLDBERG, R; PETRAVIC, M; WONG, WC; DEZHANG, Z; NYGREN, E; SVENSSON, BG 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/25 EPITAXIAL CRYSTALLIZATION  ION-IMPLANTATION  AMORPHOUS SI  SILICON  AMORPHIZATION  SUPERLATTICES   LATTICE DISORDER, REFRACTIVE-INDEX CHANGES AND WAVE-GUIDES IN LINBO3 FORMED BY H+-IMPLANTATION 期刊论文  OAI收割 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 卷号: 18, 期号: 1, 页码: 83-87 SHAO, TH; JIANG, XY; XU, ZQ; FENG, XQ 收藏  |  浏览/下载：9/0  |  提交时间：2012/03/25 ION-IMPLANTATION  HELIUM IMPLANTATION