机构

• 苏州纳米技术与纳米... [44]

采集方式

• OAI收割 [44]

内容类型

• 期刊论文 [44]

发表日期

• 2017 [44]

学科主题

筛选

浏览/检索结果: 共44条，第1-10条 帮助 限定条件 内容类型：期刊论文    发表日期：2017    存缴方式：oaiharvest    专题：苏州纳米技术与纳米仿生研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide 期刊论文  OAI收割 CHINESE PHYSICS B, 2017 作者:  Liang, Feng;  Zhao, De-Gang;  Jiang, De-Sheng;  Liu, Zong-Shun;  Zhu, Jian-Jun   |  收藏  |   Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文  OAI收割 IEEE PHOTONICS JOURNAL, 2017 作者:  Yang, Jing;  Zhao, Degang;  Jiang, Desheng;  Chen, Ping;  Zhu, Jianjun   |  收藏  |   Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths 期刊论文  OAI收割 CHINESE PHYSICS B, 2017 作者:  Li, Xiang;  Zhao, De-Gang;  Jiang, De-Sheng;  Yang, Jing;  Chen, Ping   |  收藏  |   Different annealing temperature suitable for different Mg doped P-GaN 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2017 作者:  Liu, S. T.;  Yang, J.;  Zhao, D. G.;  Jiang, D. S.;  Liang, F.   |  收藏  |   Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文  OAI收割 OPTICS EXPRESS, 2017 作者:  Yang, J.;  Zhao, D. G.;  Jiang, D. S.;  Li, X.;  Liang, F.   |  收藏  |   Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2017 作者:  Liang, Feng;  Zhao, Degang;  Jiang, Desheng;  Liu, Zongshun;  Zhu, Jianjun   |  收藏  |   Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes 期刊论文  OAI收割 CHINESE PHYSICS B, 2017 作者:  Liang, Feng;  Zhao, De-Gang;  Jiang, De-Sheng;  Liu, Zong-Shun;  Zhu, Jian-Jun   |  收藏  |   Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2017 作者:  Yang, J.;  Zhao, D. G.;  Jiang, D. S.;  Chen, P.;  Zhu, J. J.   |  收藏  |   Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials 期刊论文  OAI收割 CHINESE PHYSICS B, 2017 作者:  Yang, Jing;  Zhao, De-Gang;  Jiang, De-Sheng;  Chen, Ping;  Liu, Zong-Shun   |  收藏  |   Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文  OAI收割 AIP ADVANCES, 2017 作者:  Chen, P.;  Zhao, D. G.;  Jiang, D. S.;  Long, H.;  Li, M.   |  收藏  |