机构

• 半导体研究所 [16]

采集方式

• OAI收割 [16]

内容类型

• 期刊论文 [16]

发表日期

• 2010 [16]

学科主题

• 光电子学 [16]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2010     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124211 作者:  Wang H;  Yang H;  Yang H;  Jiang DS;  Zhao DG 收藏  |   Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |   Abnormal photoabsorption in high resistance GaN epilayer 期刊论文  OAI收割 acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051 Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |   Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |   Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文  OAI收割 : journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302 作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM 收藏  |   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文  OAI收割 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |   Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文  OAI收割 thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Yang H (Yang H.) 收藏  |