机构

• 半导体研究所 [32]

采集方式

• OAI收割 [32]

内容类型

• 期刊论文 [32]

发表日期

• 2016 [5]
• 2015 [4]
• 2014 [2]
• 2013 [5]
• 2012 [12]
• 2011 [1]
• 更多

学科主题

• 光电子学 [32]

筛选

浏览/检索结果: 共32条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 XPS study of impurities in Si-doped AlN film 期刊论文  OAI收割 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文  OAI收割 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang 收藏  |  浏览/下载：20/0  |  提交时间：2017/03/10 GaN high electron mobility transistors with AlInN back barriers 期刊论文  OAI收割 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文  OAI收割 vacuum, 2016, 卷号: 129, 页码: 99-104 J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang 收藏  |  浏览/下载：14/0  |  提交时间：2017/03/10 Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文  OAI收割 journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86 J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du 收藏  |  浏览/下载：13/0  |  提交时间：2016/03/23 Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文  OAI收割 journal of applied physics, 2015, 卷号: 117, 页码: 055709 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：14/0  |  提交时间：2016/03/23 Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文  OAI收割 applied optics, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711 X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG 收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23 The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943 P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang 收藏  |  浏览/下载：9/0  |  提交时间：2016/03/22 The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 116, 116, 期号: 16, 页码: 163708, 163708 作者:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.   |  收藏  |  浏览/下载：16/0  |  提交时间：2015/03/19