机构

• 苏州纳米技术与纳米仿... [8]
• 高能物理研究所 [2]
• 物理研究所 [1]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2015 [11]

学科主题

• Chemistry;... [1]
• Science & ... [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2015     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer 期刊论文  OAI收割 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 卷号: 119, 期号: 4, 页码: 1209 Deng, Z; Li, ZS; Jiang, Y; Ma, ZG; Fang, YT; Li, YF; Wang, WX; Jia, HQ; Chen, H 收藏  |  浏览/下载：16/0  |  提交时间：2016/12/26 A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 页码: 7 作者:  Li, X;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS 收藏  |  浏览/下载：13/0  |  提交时间：2015/12/31 GaAs laser diodes  Threshold current  Divergence angle   Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 5 作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS 收藏  |  浏览/下载：17/0  |  提交时间：2015/12/31 Nitride materials  Crystal growth  Photoluminescence  Multiple quantum wells  Localization states  Green light   Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells 期刊论文  OAI收割 OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 9 作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS 收藏  |  浏览/下载：12/0  |  提交时间：2015/12/31 Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 9, 页码: 5 作者:  Li,XJ;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ 收藏  |  浏览/下载：45/0  |  提交时间：2015/12/31 ohmic contact  p-type GaN  transportation mechanism  deep-level-defect band   Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 5 作者:  Le, LC 收藏  |  浏览/下载：7/0  |  提交时间：2015/12/31 Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 5, 页码: 6 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ 收藏  |  浏览/下载：17/0  |  提交时间：2015/12/31 Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 9, 页码: 4 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P 收藏  |  浏览/下载：16/0  |  提交时间：2015/12/31 high electron mobility transistor  two-dimensional electron gas  GaN   Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 5, 页码: 5 作者:  Shi, M;  Chen, P;  Zhao, DG;  Jiang, DS;  Zheng, J 收藏  |  浏览/下载：20/0  |  提交时间：2015/12/31 AlN  field emission  cold cathode  negative electron affinity   Isotropic Negative Area Compressibility over Large Pressure Range in Potassium Beryllium Fluoroborate and its Potential Applications in Deep Ultraviolet Region 期刊论文  OAI收割 ADVANCED MATERIALS, 2015, 卷号: 27, 期号: 33, 页码: 4851-4857 作者:  Jiang, XX;  Luo, SY;  Kang, L;  Gong, PF;  Yao, WJ 收藏  |  浏览/下载：16/0  |  提交时间：2016/04/18 acoustic-optics effects  isotropic negative area compressibility  Poisson's ratio  potassium beryllium fluoroborate