机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 会议论文 [1]

发表日期

• 2017 [1]
• 2016 [1]
• 2013 [2]
• 2006 [1]
• 2005 [3]
• 2004 [4]
• 更多

学科主题

• 半导体材料 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文  OAI收割 Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101 作者:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan 收藏  |  浏览/下载：37/0  |  提交时间：2018/06/15 Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文  OAI收割 Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104 Li-Xin Tian; Feng Zhang; Zhan-Wei Shen; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor 期刊论文  OAI收割 materials science forum, 2013, 卷号: 740-742, 页码: 239-242 Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang 收藏  |  浏览/下载：23/0  |  提交时间：2014/05/08 Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si(100) substrates 期刊论文  OAI收割 chinese physics b, 2013, 卷号: 22, 期号: 8, 页码: 086802 Liu Xing-Fang, Sun Guo-Sheng, Liu Bin, Yan Guo-Guo, Guan Min, Zhang Yang, Zhang Feng, Dong Lin, Zheng Liu, Liu Sheng-Bei, Tian Li-Xin, Wang Lei, Zhao Wan-Shun, Zeng Yi-Ping 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/18 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：99/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC 期刊论文  OAI收割 chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 599-603 Xin G; Sun, GS; Li JM; Zhang YX; Lei W; Zhao WS; Zeng YP 收藏  |  浏览/下载：22/0  |  提交时间：2010/03/17 ion implantation   LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications 期刊论文  OAI收割 人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 982-985 作者:  LIU Xingfang 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23 Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs 期刊论文  OAI收割 人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 1006-1010 作者:  NING Jin;  LIU Xingfang 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23 Second-Order Raman Scattering from n- and p-Type 4H-SiC 期刊论文  OAI收割 半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1555-1560 Gao Xin; Sun Guosheng; Li Jinmin; Wang Lei; Zhao Wanshun; Zhang Yongxin; Zeng Yiping 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/23 Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides 期刊论文  OAI收割 半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1205-1210 Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Junxi; Wang Lei; Zhao Wanshun; Wang Xiaoliang; Zeng Yiping; Li Jinmin 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23