机构

• 半导体研究所 [20]

采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [19]
• 会议论文 [1]

发表日期

• 2013 [3]
• 2012 [1]
• 2009 [1]
• 2008 [2]
• 2007 [2]
• 2006 [1]
• 更多

学科主题

• 半导体材料 [20]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates 期刊论文  OAI收割 applied surface science, 2013, 卷号: 270, 页码: 301-306 Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17 Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces 期刊论文  OAI收割 physica status solidi (a), 2013, 卷号: 210, 期号: 11, 页码: 2503–2509 Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang 收藏  |  浏览/下载：19/0  |  提交时间：2014/03/17 Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates 期刊论文  OAI收割 applied surface science, 2013, 卷号: 270, 页码: 301-306 Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17 Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates 期刊论文  OAI收割 journal of physics d: applied physics, 2012, 卷号: 45, 期号: 24, 页码: 245102 Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Zhao, Wanshun; Wang, Lei; Li, Xiguang; Wang, Zhanguo 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/22 Epitaxial growth on 4H-SiC by TCS as a silicon precursor 期刊论文  OAI收割 半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 21-25 作者:  Liu Xingfang 收藏  |  浏览/下载：30/0  |  提交时间：2010/11/23 Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1453-1456 作者:  Wang Liang;  Ning Jin;  Zhao Yongmei;  Liu Xingfang 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23 Heteroepitaxial Growth of 3C-SiC Films on Maskless Patterned Silicon Substrates 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1254-1257 作者:  Liu Xingfang;  Ning Jin;  Zhao Yongmei 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23 Improved field emission properties from metal-coated diamond films 期刊论文  OAI收割 diamond and related materials, 2007, 卷号: 16, 期号: 3, 页码: 650-653 Zhao YM (Zhao Yongmei); Zhang BL (Zhang Binglin); Yao N (Yao Ning); Sun GS (Sun Guosheng); Li JM (Li Jinmin) 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/29 MWPCVD diamond films   Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD 期刊论文  OAI收割 半导体学报, 2007, 卷号: 28, 期号: 1, 页码: 1-4 作者:  Liu Xingfang;  Zhao Yongmei 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：99/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes