中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [8]
采集方式
OAI收割 [8]
内容类型
期刊论文 [7]
会议论文 [1]
发表日期
2013 [3]
2010 [3]
2006 [2]
学科主题
半导体材料 [8]
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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
期刊论文
OAI收割
applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/02/12
Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3–ZnS nanocomposites and improved photoresponsive characteristic
期刊论文
OAI收割
J Mater Sci: Mater Electron, J Mater Sci: Mater Electron, 2013, 2013, 卷号: 24, 24, 页码: 4197–4203, 4197–4203
作者:
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收藏
  |  
浏览/下载:13/0
  |  
提交时间:2015/05/11
Low-temperature abnormal behavior of continuous photocurrent in Bi2S3 nanowires
期刊论文
OAI收割
j. mater. chem. c, J. Mater. Chem. C, 2013, 2013, 卷号: 1, 1, 页码: 5866-5871, 5866-5871
作者:
R. X. Li
;
Q. Yue
;
Z. M. Wei
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2015/05/11
The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
期刊论文
OAI收割
solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994
Song HP (Song H. P.)
;
Zheng GL (Zheng G. L.)
;
Yang AL (Yang A. L.)
;
Guo Y (Guo Y.)
;
Wei HY (Wei H. Y.)
;
Li CM (Li C. M.)
;
Yang SY (Yang S. Y.)
;
Liu XL (Liu X. L.)
;
Zhu QS (Zhu Q. S.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/27
ZnO
In2O3
MOCVD
Photoelectron spectroscopies
IN2O3-ZNO FILMS
TRANSPARENT
OXIDE
SEMICONDUCTORS
INN
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:144/21
  |  
提交时间:2010/08/17
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Valence band offset
NEGATIVE ELECTRON-AFFINITY
INDIUM NITRIDE
WURTZITE GAN
SURFACE
FILM
ALN
TRANSPORT
EMISSION
NAXWO3
GROWTH
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire
期刊论文
OAI收割
journal of the electrochemical society, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 2010, 卷号: 157, 157, 期号: 7, 页码: h721-h726, H721-H726
作者:
Wei TB (Wei T. B.)
;
Hu Q (Hu Q.)
;
Duan RF (Duan R. F.)
;
Wei XC (Wei X. C.)
;
Yang JK (Yang J. K.)
  |  
收藏
  |  
浏览/下载:292/52
  |  
提交时间:2010/06/18
atomic force microscopy
Atomic Force Microscopy
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
OAI收割
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC