机构

• 半导体研究所 [18]

采集方式

• OAI收割 [13]
• iSwitch采集 [5]

内容类型

• 期刊论文 [12]
• 会议论文 [6]

发表日期

• 2007 [4]
• 2006 [1]
• 2003 [2]
• 2002 [5]
• 2001 [6]

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：89/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/08 aluminum nitride  low pressure metalorganic chemical vapor deposition (LP-MOCVD)  V/III ratio  preferential orientation growth mechanism   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：102/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文  OAI收割 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：162/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE   Visible blind p(+)-pi-n(-)-n(+) ultraviolet photodetectors based on 4H-SiC homoepilayers 期刊论文  OAI收割 microelectronics journal, 2006, 卷号: 37, 期号: 11, 页码: 1396-1398 作者:  Ning J;  Liu XF 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 4H-SiC   Epitaxial growth and characterization of sic on c-plane sapphire substrates by ammonia nitridation 期刊论文  iSwitch采集 Journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 1-8 作者:  Luo, MC;  Li, JM;  Wang, QM;  Sun, GS;  Wang, L 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Infrared reflectivity  Raman  Sapphire substrate  X-ray diffraction  Chemical vapor deposition  Sic   Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 1-8 Luo MC; Li JM; Wang QM; Sun GS; Wang L; Li GR; Zeng YP; Lin LY 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 infrared reflectivity  Raman  sapphire substrate  X-ray diffraction  chemical vapor deposition  SiC  GAN  FILMS   Structural properties and raman measurement of aln films grown on si (111) by nh3-gsmbe 期刊论文  iSwitch采集 Journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235 作者:  Luo, MC;  Wang, XL;  Li, JM;  Liu, HX;  Wang, L 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Atomic force microscopy  Raman  Transmission electron microscopy  Molecular beam epitaxy  Aluminium nitride   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 期刊论文  OAI收割 silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：78/0  |  提交时间：2010/08/12 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY   Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235 Luo MC; Wang XL; Li JM; Liu HX; Wang L; Sun DZ; Zeng YP; Lin LY 收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12 atomic force microscopy  Raman  transmission electron microscopy  molecular beam epitaxy  aluminium nitride  ELECTRON-AFFINITY  GAN  SI(111)