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Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [24]
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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文  OAI收割
journal of alloys and compounds, 2015, 卷号: 625, 页码: 266–270
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
收藏  |  浏览/下载:24/0  |  提交时间:2016/03/23
Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文  OAI收割
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载:19/0  |  提交时间:2016/03/23
Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth 期刊论文  OAI收割
thin solid films, THIN SOLID FILMS, 2015, 2015, 卷号: 586, 586, 页码: 54-57, 54-57
作者:  
J.J.Wen;  Z. Liu;  T.W. Zhou;  C.L. Xue;  Y.H. Zuo
  |  收藏  |  浏览/下载:30/0  |  提交时间:2016/03/22
Photonic microwave-signal-mixing technique using phase-coherent orthogonal optical carriers for radio-over-fiber application 期刊论文  OAI收割
optics letters, OPTICS LETTERS, 2014, 2014, 卷号: 39, 39, 期号: 18, 页码: 5263-5266, 5263-5266
作者:  
Zheng, JY;  Wang, J;  Yu, J;  Zhu, M;  Dong, Z
  |  收藏  |  浏览/下载:18/0  |  提交时间:2015/03/25
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文  OAI收割
journal of applied physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
收藏  |  浏览/下载:21/0  |  提交时间:2014/04/30
Saturation of the junction voltage in GaN-based laser diodes 期刊论文  OAI收割
applied physics letters, 2013, 卷号: 102, 期号: 18, 页码: 183509
Feng, M.X.; Liu, J.P.; Zhang, S.M.; Liu, Z.S.; Jiang, D.S.; Li, Z.C.; Wang, F.; Li, D.Y.; Zhang, L.Q.; Wang, H.; Yang, H.
收藏  |  浏览/下载:19/0  |  提交时间:2014/05/08
Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文  OAI收割
journal of crystal growth, 2013, 卷号: 372, 页码: 43-48
Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.; Liu, Z. H.; Yang, H.
收藏  |  浏览/下载:11/0  |  提交时间:2013/08/27
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, Semiconductor Science and Technology, 2013, 2013, 卷号: 28, 28, 期号: 10, 页码: 105020, 105020
作者:  
L L Wu, D G Zhao, D S Jiang, P Chen, L C Le, L Li, Z S Liu, S M Zhang, J J Zhu, H Wang, B S Zhang, H Yang
  |  收藏  |  浏览/下载:10/0  |  提交时间:2014/04/09
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth 期刊论文  OAI收割
ecs solid state lett., ECS Solid State Lett., 2013, 2013, 卷号: 2, 2, 期号: 9, 页码: 73-75, 73-75
作者:  
J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
  |  收藏  |  浏览/下载:17/0  |  提交时间:2014/04/04
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文  OAI收割
journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 14, 页码: 143706, 143706
作者:  
Le, L. C.;  Zhao, D. G.;  Jiang, D. S.;  Li, L.;  Wu, L. L.
  |  收藏  |  浏览/下载:11/0  |  提交时间:2014/04/09