机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [8]
• 会议论文 [1]

发表日期

• 2016 [1]
• 2015 [1]
• 2014 [3]
• 2013 [3]
• 2012 [1]

学科主题

• 半导体器件 [9]
• 光电子学 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文  OAI收割 solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015 Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Yanan Guo; Xuecheng Wei; Junxi Wang; Jinmin Li 收藏  |  浏览/下载：51/0  |  提交时间：2016/06/02 Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser 期刊论文  OAI收割 optics express, Optics Express, 2015, 2015, 卷号: 23, 23, 期号: 9, 页码: 11334-11340, 11334-11340 作者:  Yingdong Tian;  Jianchang Yan;  Yun Zhang   |  收藏  |  浏览/下载：26/0  |  提交时间：2016/04/15 Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes 期刊论文  OAI收割 journal of luminescence, JOURNAL OF LUMINESCENCE, 2014, 2014, 卷号: 155, 155, 页码: 238-243, 238-243 作者:  Yang, Yujue;  Ma, Ping;  Wei, Xuecheng;  Yan, Dan;  Wang, Yafang   |  收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19 Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文  OAI收割 ieee photonics journal, IEEE PHOTONICS JOURNAL, 2014, 2014, 卷号: 6, 6, 期号: 6, 页码: 8200610, 8200610 作者:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang   |  收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19 Characterization of nitride-based LED materials and devices using TOF-SIMS 期刊论文  OAI收割 surface and interface analysis, SURFACE AND INTERFACE ANALYSIS, 2014, 2014, 卷号: 46, 46, 页码: 299-302, 299-302 作者:  Wei, Xuecheng;  Zhao, Lixia;  Wang, Junxi;  Zeng, Yiping;  Li, Jinmin   |  收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20 Modification of Carrier Distribution in Dual-Wavelength Light-Emitting Diodes by Specified Mg Doped Barrier 期刊论文  OAI收割 ecs solid state lett., ECS Solid State Lett., 2013, 2013, 卷号: 2, 2, 期号: 10, 页码: r37-r39, R37-R39 作者:  Zhao Si, Tongbo Wei, Jun Ma, Jianchang Yan, Xuecheng Wei, Hongxi Lu, Binglei Fu, Shaoxin Zhu, Zhe Liu, Junxi Wang and Jinmin Li   |  收藏  |  浏览/下载：18/0  |  提交时间：2014/04/09 Improved hole distribution in InGaN-GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells 期刊论文  OAI收割 physica status solidi (a), physica status solidi (a), 2013, 2013, 卷号: 210, 210, 期号: 3, 页码: 559-562, 559-562 作者:  Zhao Si, Tongbo Wei, Jianchang Yan, Jun Ma, Ning Zhang, Zhe Liu, Xuecheng Wei, Xiaodong Wang, Hongxi Lu, Junxi Wang, Jinmin Li   |  收藏  |  浏览/下载：13/0  |  提交时间：2014/04/09 Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2013, 2013, 卷号: 103, 103, 页码: 241107, 241107 作者:  Kui Wu, Tongbo Wei, Ding Lan, Xuecheng Wei, Haiyang Zheng, Yu Chen, Hongxi Lu, Kai Huang, Junxi Wang, Yi Luo, Jinmin Li   |  收藏  |  浏览/下载：17/0  |  提交时间：2014/04/09 Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 13, 页码: 131101, 131101 作者:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi)   |  收藏  |  浏览/下载：22/0  |  提交时间：2013/03/27