机构

• 半导体研究所 [24]

采集方式

• OAI收割 [24]

内容类型

• 期刊论文 [22]
• 会议论文 [2]

发表日期

• 2015 [1]
• 2014 [4]
• 2013 [3]
• 2012 [2]
• 2011 [6]
• 2010 [4]
• 更多

学科主题

• 半导体材料 [24]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文  OAI收割 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29 Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文  OAI收割 journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117 Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25 Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文  OAI收割 journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502 Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文  OAI收割 european physical journal-applied physics, 2014, 卷号: 66, 期号: 2, 页码: 20101 Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG 收藏  |  浏览/下载：17/0  |  提交时间：2015/04/02 Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文  OAI收割 european physical journal-applied physics, 2014, 卷号: 68, 期号: 1, 页码: 10105 Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/20 Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文  OAI收割 journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文  OAI收割 journal of crystal growth, 2013, 卷号: 383, 页码: 25–29 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：14/0  |  提交时间：2014/03/18 Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文  OAI收割 journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：20/0  |  提交时间：2014/03/18 Theoretical study of the effects of InAs/GaAs quantum dot layer 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu, Yong-Xian; Yang, Xiao-Guang; Ji, Hai-Ming; Xu, Peng-Fei; Yang, Tao 收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07 Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao) 收藏  |  浏览/下载：18/0  |  提交时间：2013/04/02